5秒后页面跳转
捷配首页

Datasheet > MGFC40V5964
MGFC40V5964 PDF预览

MGFC40V5964

更新时间： 2024-09-18 04:16:03
品牌 Logo 应用领域
三菱 - MITSUBISHI /
页数 文件大小 规格书
2页 208K
描述
5.9 ~ 6.4GHz BAND 10W INTERNALLY MATCHED GaAs FET

阅读下载

中文翻译

获取价格

MGFC40V5964 技术参数

生命周期：Obsolete包装说明：FLANGE MOUNT, R-CDFM-F2
针数：2Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.82
其他特性：HIGH RELIABILITY外壳连接：SOURCE
配置：SINGLE最小漏源击穿电压：10 V
最大漏极电流 (Abs) (ID)：6 A最大漏极电流 (ID)：2.4 A
FET 技术：JUNCTION最高频带：C BAND
JESD-30 代码：R-CDFM-F2元件数量：1
端子数量：2工作模式：DEPLETION MODE
最高工作温度：175 °C封装主体材料：CERAMIC, METAL-SEALED COFIRED
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
极性/信道类型：N-CHANNEL功耗环境最大值：43 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：YES端子形式：FLAT
端子位置：DUAL晶体管应用：AMPLIFIER
晶体管元件材料：GALLIUM ARSENIDEBase Number Matches：1

MGFC40V5964 数据手册

 浏览型号MGFC40V5964的Datasheet PDF文件第2页 
MITSUBISHI SEMICONDUCTOR <GaAs FET>  
MGFC40V5964  
5.9 ~ 6.4GHz BAND 10W INTERNALLY MATCHED GaAs FET  
DESCRIPTION  
Unit: millimeters (inches)  
OUTLINE DRAWING  
The MGFC40V3742 is an internally impedance-matched  
GaAs power FET especially designed for use in 5.9 ~ 6.4  
GHz band amplifiers.The hermetically sealed metal-ceramic  
package guarantees high reliability.  
24+/-0.3  
R1.25  
(1)  
0.6+/-0.15  
FEATURES  
Class A operation  
R1.2  
Internally matched to 50(ohm) system  
High output power  
P1dB = 10W (TYP.) @ f=5.9~6.4GHz  
High power gain  
(2)  
GLP = 10 dB (TYP.) @ f=5.9~6.4GHz  
High power added efficiency  
P.A.E. = 30 % (TYP.) @ f=5.9~6.4GHz  
Low distortion [ item -51 ]  
(3)  
IM3= -49 dBc(TYP.) @Po=29(dBm) S.C.L.  
20.4+/-0.2  
13.4  
APPLICATION  
item 01 : 5.9~6.4 GHz band power amplifier  
item 51 : 5.9~6.4 GHz band digital radio communication  
QUALITY GRADE  
IG  
(1): GATE  
(2): SOURCE (FLANGE)  
(3): DRAIN  
GF-18  
RECOMMENDED BIAS CONDITIONS  
VDS = 10(V)  
ID = 2.4 (A)  
Rg = 50(ohm) Refer to Bias Procedure  
(Ta=25 deg.C)  
ABSOLUTE MAXIMUM RATINGS  
< Keep safety first in your circuit designs! >  
Symbol  
VGDO  
VGSO  
ID  
Parameter  
Gate to drain voltage  
Gate to source voltage  
Drain current  
Ratings  
-15  
Unit  
V
Mitsubishi Electric Corporation puts the maximum effort into  
making semiconductor products better and more reliable, but  
there is always the possibility that trouble may occur with them.  
Trouble with semiconductors may lead to personal injury, fire or  
property damage. Remember to give due consideration to safety  
when making your circuit designs, with appropriate measures  
such as (1)placement of substitutive, auxiliary circuits, (2)use of  
non-flammable material or (3)prevention against any malfunction  
or mishap.  
-15  
V
7.5  
A
IGR  
Reverse gate current  
Forward gate current  
Total power dissipation *1  
Channel temperature  
Storage temperature  
-20  
mA  
mA  
W
IGF  
42  
PT  
42.8  
175  
Tch  
deg.C  
deg.C  
Tstg  
-65 / +175  
*1 : Tc=25 deg.C  
(Ta=25 deg.C)  
ELECTRICAL CHARACTERISTICS  
Limits  
Symbol  
Parameter  
Test conditions  
Unit  
Min.  
Typ.  
4.5  
2
Max.  
IDSS  
gm  
Saturated drain current  
Transconductance  
Gate to source cut-off voltage  
Output power at 1dB gain compression  
Linear power gain  
VDS=3V, VGS=0V  
VDS=3V, ID=2.2A  
VDS=3V, ID=40mA  
-
6
-
A
S
-
-2  
39.5  
8
VGS(off)  
P1dB  
GLP  
ID  
-3  
-4  
-
V
40.5  
10  
dBm  
dB  
A
VDS=10V, ID(RF off)=2.4A, f=5.9~6.4GHz  
-
Drain current  
-
2.4  
30  
-
P.A.E.  
IM3  
Power added efficiency  
-
-
%
3rd order IM distortion  
*1  
*2  
-42  
-
-49  
3
-
dBc  
Rth(ch-c) Thermal resistance  
Delta Vf method  
3.5 deg.C/W  
*1 : item -51, 2 tone test, Po=29dBm Single Carrier Level, f=6.4GHz, Delta f=10MHz  
*2 : Channel to case  
June/2004  
MITSUBISHI  
ELECTRIC  
12

中文翻译

下载PDF

与MGFC40V5964相关器件

型号 品牌 获取价格 描述 数据表
MGFC40V5964_04 MITSUBISHI

获取价格

 		5.9 ~ 6.4GHz BAND 10W INTERNALLY MATCHED GaAs FET
MGFC40V5964_11 MITSUBISHI

获取价格

 		C band internally matched power GaAs FET
MGFC40V5964-51 MITSUBISHI

获取价格

 		RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction
MGFC40V5964A MITSUBISHI

获取价格

 		5.9 - 6.4GHz BAND 10W INTERNALLY MATCHED GaAs FET
MGFC40V5964A-01 MITSUBISHI

获取价格

 		RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction
MGFC40V6472 MITSUBISHI

获取价格

 		6.4- 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET
MGFC40V6472_04 MITSUBISHI

获取价格

 		6.4 - 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET
MGFC40V6472-51 MITSUBISHI

获取价格

 		RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction
MGFC40V6472A MITSUBISHI

获取价格

 		6.4 - 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET
MGFC40V6472A-51 MITSUBISHI

获取价格

 		RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction

与MGFC40V5964相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证