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MGFC40V5964-51 PDF预览

MGFC40V5964-51

更新时间: 2024-11-30 14:38:15
品牌 Logo 应用领域
三菱 - MITSUBISHI 局域网放大器晶体管
页数 文件大小 规格书
2页 58K
描述
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-18, 2 PIN

MGFC40V5964-51 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-CDFM-F2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.84
外壳连接:SOURCE配置:SINGLE
最大漏极电流 (Abs) (ID):7.5 A最大漏极电流 (ID):6 A
FET 技术:JUNCTION最高频带:C BAND
JESD-30 代码:R-CDFM-F2元件数量:1
端子数量:2工作模式:DEPLETION MODE
最高工作温度:175 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL功耗环境最大值:42.8 W
最小功率增益 (Gp):8 dB认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子形式:FLAT端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:GALLIUM ARSENIDE
Base Number Matches:1

MGFC40V5964-51 数据手册

 浏览型号MGFC40V5964-51的Datasheet PDF文件第2页 

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