Datasheet > MGFC40V5964_11

MGFC40V5964_11

更新时间： 2024-09-18 11:02:11

品牌	Logo	应用领域
三菱 - MITSUBISHI		/
页数	文件大小	规格书
2页	90K
描述
C band internally matched power GaAs FET

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MGFC40V5964_11 数据手册

< C band internally matched power GaAs FET >

MGFC40V5964

5.9 – 6.4 GHz BAND / 10W

OUTLINE DRAWING

Unit: millimeters (inches)

24+/-0.3

DESCRIPTION

The MGFC40V5964 is an internally impedance-matched

GaAs power FET especially designed for use in 5.9 – 6.4

GHz band amplifiers. The hermetically sealed metal-ceramic

package guarantees high reliability.

R1.25

(1)

0.6+/-0.15

FEATURES

Class A operation

R1.2

Internally matched to 50(ohm) system

 High output power

P1dB=10W (TYP.) @f=5.9 – 6.4GHz

 High power gain

(2)

GLP=10dB (TYP.) @f=5.9 – 6.4GHz

 High power added efficiency

P.A.E.=30% (TYP.) @f=5.9 – 6.4GHz

 Low distortion [item -51]

(3)

IM3=-49dBc (TYP.) @Po=29dBm S.C.L

20.4+/-0.2

13.4

APPLICATION

 item 01 : 5.9 – 6.4 GHz band power amplifier

 item 51 : 5.9 – 6.4 GHz band digital radio communication

QUALITY

 IG

(1): GATE

(2): SOURCE (FLANGE)

(3): DRAIN

RECOMMENDED BIAS CONDITIONS

 VDS=10V  ID=2.4A  RG=50ohm Refer to Bias Procedure

GF-18

Absolute maximum ratings (Ta=25C)

Keep Safety first in your circuit designs!

Mitsubishi Electric Corporation puts the maximum

effort into making semiconductor products better

and more reliable , but there is always the

possibility that trouble may occur with them.

Trouble with semiconductors may lead to personal

injury , fire or property damage. Remember to give

due consideration to safety when making your

circuit designs , with appropriate measure such

as (I) placement of substitutive , auxiliary circuits ,

(ii) use of non-flammable material or (iii) prevention

against any malfunction or mishap.

Symbol

Parameter

Ratings

Unit

Gate to drain

VGDO

breakdown voltage

-15

VGSO Gate to source breakdown voltage

-15

Drain current

7.5

IGR

IGF

PT *1

Tch

Reverse gate current

Forward gate current

Total power dissipation

Cannel temperature

Storage temperature

-20

42.8

175

C

Tstg

-65 to +175

*1 : Tc=25C

Electrical characteristics

(Ta=25C)

Symbol

Parameter

Test conditions

Limits

Typ.

4.5

Unit

Min.

Max.

Saturated drain current

Transconductance

VDS=3V,VGS=0V

IDSS

VDS=3V,ID=2.2A

VDS=3V,ID=40mA

-2

39.5

Gate to source cut-off voltage

-3

-4

VGS(off)

P1dB

GLP

Output power at 1dB gain compression VDS=10V,ID(RF off)=2.4A

40.5

dBm

f=5.9 – 6.4GHz

Linear Power Gain

Drain current

2.4

P.A.E.

IM3 *2

Rth(ch-c) *3

Power added efficiency

3rd order IM distortion

Thermal resistance

-42

-49

dBc

C/W

delta Vf method

3.5

*2 :item -51 ,2 tone test,Po=29dBm Single Carrier Level ,f=6.4GHz,delta f=10MHz

*3 :Channel-case

Publication Date : Apr., 2011

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与MGFC40V5964_11相关器件

型号	品牌	获取价格	描述	数据表
MGFC40V5964-51	MITSUBISHI	获取价格	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction
MGFC40V5964A	MITSUBISHI	获取价格	5.9 - 6.4GHz BAND 10W INTERNALLY MATCHED GaAs FET
MGFC40V5964A-01	MITSUBISHI	获取价格	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction
MGFC40V6472	MITSUBISHI	获取价格	6.4- 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET
MGFC40V6472_04	MITSUBISHI	获取价格	6.4 - 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET
MGFC40V6472-51	MITSUBISHI	获取价格	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction
MGFC40V6472A	MITSUBISHI	获取价格	6.4 - 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET
MGFC40V6472A-51	MITSUBISHI	获取价格	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction
MGFC40V7177	MITSUBISHI	获取价格	7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET
MGFC40V7177A	MITSUBISHI	获取价格	7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET

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