生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-CDFM-F2 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.84 | 外壳连接: | SOURCE |
配置: | SINGLE | 最大漏极电流 (Abs) (ID): | 7.5 A |
最大漏极电流 (ID): | 6 A | FET 技术: | JUNCTION |
最高频带: | C BAND | JESD-30 代码: | R-CDFM-F2 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | DEPLETION MODE | 最高工作温度: | 175 °C |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
功耗环境最大值: | 42.8 W | 最小功率增益 (Gp): | 8 dB |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | DUAL | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | GALLIUM ARSENIDE | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MGFC40V5258-51 | MITSUBISHI |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction | |
MGFC40V5964 | MITSUBISHI |
获取价格 |
5.9 ~ 6.4GHz BAND 10W INTERNALLY MATCHED GaAs FET | |
MGFC40V5964_04 | MITSUBISHI |
获取价格 |
5.9 ~ 6.4GHz BAND 10W INTERNALLY MATCHED GaAs FET | |
MGFC40V5964_11 | MITSUBISHI |
获取价格 |
C band internally matched power GaAs FET | |
MGFC40V5964-51 | MITSUBISHI |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction | |
MGFC40V5964A | MITSUBISHI |
获取价格 |
5.9 - 6.4GHz BAND 10W INTERNALLY MATCHED GaAs FET | |
MGFC40V5964A-01 | MITSUBISHI |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction | |
MGFC40V6472 | MITSUBISHI |
获取价格 |
6.4- 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET | |
MGFC40V6472_04 | MITSUBISHI |
获取价格 |
6.4 - 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET | |
MGFC40V6472-51 | MITSUBISHI |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction |