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MGFC40V5258-01 PDF预览

MGFC40V5258-01

更新时间: 2024-11-30 19:50:47
品牌 Logo 应用领域
三菱 - MITSUBISHI 局域网放大器晶体管
页数 文件大小 规格书
2页 77K
描述
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET

MGFC40V5258-01 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-CDFM-F2
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.84外壳连接:SOURCE
配置:SINGLE最大漏极电流 (Abs) (ID):7.5 A
最大漏极电流 (ID):6 AFET 技术:JUNCTION
最高频带:C BANDJESD-30 代码:R-CDFM-F2
元件数量:1端子数量:2
工作模式:DEPLETION MODE最高工作温度:175 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
功耗环境最大值:42.8 W最小功率增益 (Gp):8 dB
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子形式:FLAT
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:GALLIUM ARSENIDEBase Number Matches:1

MGFC40V5258-01 数据手册

 浏览型号MGFC40V5258-01的Datasheet PDF文件第2页 

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