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MGFC40V4450 PDF预览

MGFC40V4450

更新时间： 2024-11-30 04:16:03
品牌 Logo 应用领域
三菱 - MITSUBISHI 晶体射频场效应晶体管放大器局域网
页数 文件大小 规格书
2页 192K
描述
4.4 ~ 5.0GHz BAND 10 W INTERNALLY MATCHED GaAs FET

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中文翻译

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MGFC40V4450 技术参数

生命周期：Obsolete包装说明：FLANGE MOUNT, R-CDFM-F2
针数：2Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.84
Is Samacsys：N其他特性：HIGH RELIABILITY
外壳连接：SOURCE配置：SINGLE
最小漏源击穿电压：10 V最大漏极电流 (Abs) (ID)：6 A
最大漏极电流 (ID)：2.4 AFET 技术：JUNCTION
最高频带：C BANDJESD-30 代码：R-CDFM-F2
元件数量：1端子数量：2
工作模式：DEPLETION MODE最高工作温度：175 °C
封装主体材料：CERAMIC, METAL-SEALED COFIRED封装形状：RECTANGULAR
封装形式：FLANGE MOUNT极性/信道类型：N-CHANNEL
功耗环境最大值：43 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：YES
端子形式：FLAT端子位置：DUAL
晶体管应用：AMPLIFIER晶体管元件材料：GALLIUM ARSENIDE
Base Number Matches：1

MGFC40V4450 数据手册

 浏览型号MGFC40V4450的Datasheet PDF文件第2页 
MITSUBISHI SEMICONDUCTOR <GaAs FET>  
MGFC40V4450  
4.4 ~ 5.0GHz BAND 10 W INTERNALLY MATCHED GaAs FET  
DESCRIPTION  
OUTLINE DRAWING  
Unit: millimeters (inches)  
24+/-0.3  
The MGFC40V4450 is an internally impedance-matched  
GaAs power FET especially designed for use in 4.4 ~ 5.0 GHz  
band amplifiers.The hermetically sealed metal-ceramic  
package guarantees high reliability.  
R1.25  
(1)  
0.6+/-0.15  
FEATURES  
Class A operation  
2MIN  
R1.2  
Internally matched to 50(ohm) system  
High output power  
P1dB = 10W (TYP.) @ f=4.4~5.0GHz  
High power gain  
GLP = 11 dB (TYP.) @ f=4.4~5.0GHz  
High power added efficiency  
P.A.E. = 32 % (TYP.) @ f=4.4~5.0GHz  
Low distortion [ item -51 ]  
(2)  
15.8  
8.0+/-0.2  
17.4+/-0.3  
(3)  
2MIN  
IM3= -45 dBc(TYP.) @Po=29dBm S.C.L.  
20.4+/-0.2  
13.4  
APPLICATION  
item 01 : 4.4~5.0 GHz band power amplifier  
2.4+/-0.2  
0.1  
item 51 : 4.4~5.0 GHz band digital radio communication  
4.0+/-0.4  
1.4  
QUALITY GRADE  
IG  
(1): GATE  
(2): SOURCE (FLANGE)  
(3): DRAIN  
RECOMMENDED BIAS CONDITIONS  
GF-18  
VDS = 10 (V)  
ID = 2.4(A)  
Refer to Bias Procedure  
RG= 50 (ohm)  
(Ta=25 deg.C)  
ABSOLUTE MAXIMUM RATINGS  
< Keep safety first in your circuit designs! >  
Symbol  
VGDO  
VGSO  
ID  
Parameter  
Gate to drain voltage  
Gate to source voltage  
Drain current  
Ratings  
Unit  
V
Mitsubishi Electric Corporation puts the maximum effort into  
making semiconductor products better and more reliable, but  
there is always the possibility that trouble may occur with them.  
Trouble with semiconductors may lead to personal injury, fire or  
property damage. Remember to give due consideration to safety  
when making your circuit designs, with appropriate measures  
such as (1)placement of substitutive, auxiliary circuits, (2)use of  
non-flammable material or (3)prevention against any malfunction  
or mishap.  
-15  
-15  
V
7.5  
A
IGR  
Reverse gate current  
Forward gate current  
Total power dissipation *1  
Channel temperature  
Storage temperature  
-20  
mA  
mA  
W
IGF  
42  
PT  
42.8  
175  
Tch  
deg.C  
deg.C  
Tstg  
-65 / +175  
*1 : Tc=25 deg.C  
(Ta=25 deg.C)  
ELECTRICAL CHARACTERISTICS  
Limits  
Symbol  
Parameter  
Test conditions  
Unit  
Min.  
Typ.  
4.5  
2
Max.  
IDSS  
gm  
Saturated drain current  
Transconductance  
VDS=3V, VGS=0V  
VDS=3V, ID=2.2 A  
VDS=3V, ID=40mA  
-
6
-
A
S
-
Gate to source cut-off voltage  
Output power at 1dB gain compression  
Linear power gain  
VGS(off)  
P1dB  
GLP  
ID  
-
-3  
-4  
-
V
39.5  
40.5  
11  
2.4  
32  
-45  
-
dBm  
dB  
A
VDS=10V, ID(RF off)=2.4A, f=4.4~5.0GHz  
9
-
Drain current  
-
-
-
P.A.E.  
IM3  
Power added efficiency  
-
%
3rd order IM distortion  
*1  
*2  
-42  
-
-
dBc  
Rth(ch-c) Thermal resistance  
Delta Vf method  
3.5 deg.C/W  
*1 : item -51, 2 tone test, Po=29dBm Single Carrier Level, f=5GHz, Delta f=10MHz  
*2 : Channel to case  
June/2004  
MITSUBISHI  
ELECTRIC  
12

中文翻译

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