Datasheet > MGFC39V7785A_04

MGFC39V7785A_04

更新时间： 2024-09-17 03:15:43

品牌	Logo	应用领域
三菱 - MITSUBISHI		/
页数	文件大小	规格书
2页	184K
描述
7.7 ~ 8.5GHz BAND 8W INTERNALLY MATCHED GaAs FET

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MGFC39V7785A_04 数据手册

MITSUBISHI SEMICONDUCTOR <GaAs FET>

MGFC39V3436

3.4 ~ 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET

DESCRIPTION

The MGFC39V3436 is an internally impedance-matched

GaAs power FET especially designed for use in 3.4 ~ 3.6 GHz

band amplifiers.The hermetically sealed metal-ceramic

package guarantees high reliability.

OUTLINE DRAWING Unit : millimeters

21.0 +/-0.3

FEATURES

(1)

Class A operation

0.6 +/-0.15

Internally matched to 50(ohm) system

High output power

(2)

P1dB = 8W (TYP.) @ f=3.4~3.6GHz

High power gain

R-1.6

GLP = 12.5 dB (TYP.) @ f=3.4~3.6GHz

High power added efficiency

P.A.E. = 32 % (TYP.) @ f=3.4~3.6GHz

Low distortion [ item -51 ]

(3)

10.7

IM3= -45 dBc(TYP.) @Po=28dBm S.C.L.

17.0 +/-0.2

APPLICATION

item 01 : 3.4~3.6 GHz band power amplifier

item 51 : 3.4~3.6 GHz band digital radio communication

QUALITY GRADE

12.0

RECOMMENDED BIAS CONDITIONS

VDS= 10 (V)

ID= 2.4 (A)

(1) GATE

(2) SOURCE (FLANGE)

(3) DRAIN

GF-8

RG= 50 (ohm)

(Ta=25 deg.C)

ABSOLUTE MAXIMUM RATINGS

< Keep safety first in your circuit designs! >

Symbol

VGDO

VGSO

Parameter

Gate to drain voltage

Gate to source voltage

Drain current

Ratings

-15

Unit

Mitsubishi Electric Corporation puts the maximum effort into

making semiconductor products better and more reliable, but

there is always the possibility that trouble may occur with them.

Trouble with semiconductors may lead to personal injury, fire or

property damage. Remember to give due consideration to safety

when making your circuit designs, with appropriate measures

such as (1)placement of substitutive, auxiliary circuits, (2)use of

non-flammable material or (3)prevention against any malfunction

or mishap.

-15

7.5

IGR

Reverse gate current

Forward gate current

Total power dissipation *1

Channel temperature

Storage temperature

-20

IGF

42.8

175

Tch

deg.C

Tstg

-65/+175

*1 : Tc=25 deg.C

(Ta=25 deg.C)

ELECTRICAL CHARACTERISTICS

Limits

Symbol

Parameter

Test conditions

Unit

Min.

Typ.

Max.

IDSS

Saturated drain current

Transconductance

VDS=3V, VGS=0V

VDS=3V, ID=2.2A

VDS=3V, ID=20mA

7.5

Gate to source cut-off voltage

Output power at 1dB gain compression

Linear power gain

VGS(off)

P1dB

GLP

-4.5

39.5

12.5

dBm

VDS=10V, ID(RF off)=2.4A, f=3.4~3.6GHz

Drain current

P.A.E.

IM3

Power added efficiency

-45

3rd order IM distortion

-42

dBc

Rth(ch-c) Thermal resistance

Delta Vf method

3.5 deg.C/W

*1 : item -51, 2 tone test, Po=28dBm Single Carrier Level, f=3.6GHz, Delta f=5MHz

*2 : Channel to case

June/2004

MITSUBISHI

ELECTRIC

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与MGFC39V7785A_04相关器件

型号	品牌	获取价格	描述	数据表
MGFC39V7785A_11	MITSUBISHI	获取价格	C band internally matched power GaAs FET
MGFC39V7785A-01	MITSUBISHI	获取价格	暂无描述
MGFC39V7785A-51	MITSUBISHI	获取价格	RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction
MGFC40V3742	MITSUBISHI	获取价格	3.7 ~ 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET
MGFC40V3742_04	MITSUBISHI	获取价格	3.7 ~ 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET
MGFC40V3742_11	MITSUBISHI	获取价格	C band internally matched power GaAs FET
MGFC40V3742-01	MITSUBISHI	获取价格	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction
MGFC40V3742-51	MITSUBISHI	获取价格	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction
MGFC40V3742A	MITSUBISHI	获取价格	3.7 - 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET
MGFC40V3742A-01	MITSUBISHI	获取价格	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction

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