「MGFC39V7785A-01」MGFC39V7785A-01中文资料-PDF-数据手册-[MITSUBISHI]-捷配DataSheet查询网

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与MGFC39V7785A-01相关器件

型号	品牌	获取价格	描述	数据表
MGFC39V7785A-51	MITSUBISHI	获取价格	RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction
MGFC40V3742	MITSUBISHI	获取价格	3.7 ~ 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET
MGFC40V3742_04	MITSUBISHI	获取价格	3.7 ~ 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET
MGFC40V3742_11	MITSUBISHI	获取价格	C band internally matched power GaAs FET
MGFC40V3742-01	MITSUBISHI	获取价格	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction
MGFC40V3742-51	MITSUBISHI	获取价格	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction
MGFC40V3742A	MITSUBISHI	获取价格	3.7 - 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET
MGFC40V3742A-01	MITSUBISHI	获取价格	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction
MGFC40V3742A-51	MITSUBISHI	获取价格	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction
MGFC40V4450	MITSUBISHI	获取价格	4.4 ~ 5.0GHz BAND 10 W INTERNALLY MATCHED GaAs FET