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| 型号 | 品牌 | 获取价格 | 描述 | 数据表 |
| MGFC39V7785A-51 | MITSUBISHI |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction |
|
| MGFC40V3742 | MITSUBISHI |
获取价格 |
3.7 ~ 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET |
|
| MGFC40V3742_04 | MITSUBISHI |
获取价格 |
3.7 ~ 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET |
|
| MGFC40V3742_11 | MITSUBISHI |
获取价格 |
C band internally matched power GaAs FET |
|
| MGFC40V3742-01 | MITSUBISHI |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction |
|
| MGFC40V3742-51 | MITSUBISHI |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction |
|
| MGFC40V3742A | MITSUBISHI |
获取价格 |
3.7 - 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET |
|
| MGFC40V3742A-01 | MITSUBISHI |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction |
|
| MGFC40V3742A-51 | MITSUBISHI |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction |
|
| MGFC40V4450 | MITSUBISHI |
获取价格 |
4.4 ~ 5.0GHz BAND 10 W INTERNALLY MATCHED GaAs FET |
|
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