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MGFC39V3436 PDF预览

MGFC39V3436

更新时间： 2024-02-15 06:52:27
品牌 Logo 应用领域
三菱 - MITSUBISHI 晶体射频场效应晶体管放大器局域网
页数 文件大小 规格书
2页 136K
描述
3.4 - 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET

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MGFC39V3436 技术参数

生命周期：Obsolete包装说明：FLANGE MOUNT, R-CDFM-F2
针数：2Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.84
Is Samacsys：N其他特性：HIGH RELIABILITY
外壳连接：SOURCE配置：SINGLE
最小漏源击穿电压：10 V最大漏极电流 (Abs) (ID)：7.5 A
最大漏极电流 (ID)：2.4 AFET 技术：JUNCTION
最高频带：S BANDJESD-30 代码：R-CDFM-F2
元件数量：1端子数量：2
工作模式：DEPLETION MODE最高工作温度：175 °C
封装主体材料：CERAMIC, METAL-SEALED COFIRED封装形状：RECTANGULAR
封装形式：FLANGE MOUNT极性/信道类型：N-CHANNEL
功耗环境最大值：42.8 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：YES
端子形式：FLAT端子位置：DUAL
晶体管应用：AMPLIFIER晶体管元件材料：GALLIUM ARSENIDE
Base Number Matches：1

MGFC39V3436 数据手册

 浏览型号MGFC39V3436的Datasheet PDF文件第2页 
MITSUBISHI SEMICONDUCTOR <GaAs FET>  
MGFC39V3436  
3.4 - 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET  
DESCRIPTION  
The MGFC39V3436 is an internally impedance-matched  
GaAs power FET especially designed for use in 3.4 - 3.6  
GHz band amplifiers. The hermetically sealed metal-ceramic  
package guarantees high reliability.  
OUTLINE DRAWING  
Unit : millimeters  
2
N
FEATURES  
Class A operation  
Internally matched to 50(ohm) system  
High output power  
P1dB = 8W (TYP.) @ f=3.4 - 3.6 GHz  
High power gain  
.
I
0
0.6 +/-0.15  
M
-
2
/
+
(2)  
(2)  
R-1.6  
3
.
1
1
9
.
2
1
GLP = 11 dB (TYP.) @ f=3.4 - 3.6GHz  
High power added efficiency  
P.A.E. = 32 % (TYP.) @ f=3.4 - 3.6GHz  
N
I
M
2
(3)  
Low distortion [item -51]  
2
.
0
-
/
IM3=-45dBc(Typ.) @Po=28dBm S.C.L.  
4
.
0
-
/
APPLICATION  
item 01 : 3.4 - 3.6 GHz band power amplifier  
+
1
.
0
6
.
2
+
6
.
item 51 : 3.4 - 3.6 GHz band digital ratio communication  
5
1
.
4
QUALITY GRADE  
IG  
2
.
0
RECOMMENDED BIAS CONDITIONS  
VDS = 10 (V)  
ID = 2.4 (A)  
(1) GATE  
(2) SOURCE (FLANGE)  
(3) DRAIN  
GF-8  
RG=50 (ohm)  
< Keep safety first in your circuit designs! >  
(Ta=25deg.C)  
ABSOLUTE MAXIMUM RATINGS  
Mitsubishi Electric Corporation puts the maximum effort into  
making semiconductor products better and more reliable,  
but there is always the possibility that trouble may occur  
with them. Trouble with semiconductors may lead to personal  
injury, fire or property damage. Remember to give due  
consideration to safety when making your circuit designs,  
with appropriate measures such as (1)placement of  
Symbol  
Parameter  
Gate to drain voltage  
Ratings  
Unit  
V
VGDO  
-15  
-15  
VGSO  
Gate to source voltage  
Drain current  
V
ID  
7.5  
A
IGR  
Reverse gate current  
Forward gate current  
Total power dissipation  
Channel temperature  
Storage temperature  
-20  
mA  
mA  
W
IGF  
42  
substitutive, auxiliary circuits, (2)use of non-flammable  
material or (3)prevention against any malfunction or mishap.  
PT  
Tch  
*1  
42.8  
175  
deg.C  
deg.C  
Tstg  
-65 / +175  
*1 : Tc=25deg.C  
(Ta=25deg.C)  
ELECTRICAL CHARACTERISTICS  
Limits  
Unit  
Symbol  
Parameter  
Test conditions  
Min.  
Typ.  
Max.  
7.5  
-
IDSS  
gm  
VDS = 3V , VGS = 0V  
VDS = 3V , ID = 2.2A  
VDS = 3V , ID = 20mA  
-
-
-
-
2
-
A
S
V
Saturated drain current  
Transconductance  
VGS(off)  
-4.5  
Gate to source cut-off voltage  
Output power at 1dB gain  
compression  
P1dB  
38  
39  
-
dBm  
GLP  
ID  
VDS=10V, ID(RF off)=2.4A, f=3.4 - 3.6GHz  
10  
11  
-
-
3
dB  
A
Linear power gain  
-
-
Drain current  
P.A.E.  
IM3  
32  
-45  
3
-
%
Power added efficiency  
3rd order IM distortion *1  
-42  
-
-
dBc  
Rth(ch-c)  
deg.C/W  
delta Vf method  
3.5  
Thermal resistance  
*2  
*1 : item -51,2 tone test,Po=28dBm Single Carrier Level,f=3.6GHz,delta f=5MHz  
*2 : Channel-case  
MITSUBISHI  
ELECTRIC  
18-Sep-'98  
12

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