品牌 | Logo | 应用领域 |
三菱 - MITSUBISHI | / | |
页数 | 文件大小 | 规格书 |
2页 | 88K | |
描述 | ||
C band internally matched power GaAs FET |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MGFC36V6472A-01 | MITSUBISHI |
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RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction | |
MGFC36V6472A-51 | MITSUBISHI |
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RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction | |
MGFC36V7177A | MITSUBISHI |
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7.1 - 7.7GHz BAND 4W INTERNALLY MATCHED GaAs FET | |
MGFC36V7177A_04 | MITSUBISHI |
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7.1 ~ 7.7GHz BAND 4W INTERNALLY MATCHED GaAs FET | |
MGFC36V7177A_11 | MITSUBISHI |
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C band internally matched power GaAs FET | |
MGFC36V7177A-51 | MITSUBISHI |
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RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction | |
MGFC36V7785A | MITSUBISHI |
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7.7 - 8.5GHz BAND 4W INTERNALLY MATCHED GaAs FET | |
MGFC36V7785A_04 | MITSUBISHI |
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7.7 ~ 8.5GHz BAND 4W INTERNALLY MATCHED GaAs FET | |
MGFC36V7785A_11 | MITSUBISHI |
获取价格 |
C band internally matched power GaAs FET | |
MGFC36V7785A-01 | MITSUBISHI |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction |