Datasheet > MGFC38V5964_11

MGFC38V5964_11

更新时间： 2024-11-27 11:02:11

品牌	Logo	应用领域
三菱 - MITSUBISHI		/
页数	文件大小	规格书
3页	109K
描述
C band internally matched power GaAs FET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MGFC38V5964_11 数据手册

< C band internally matched power GaAs FET >

MGFC38V5964

5.9 – 6.4 GHz BAND / 6W

DESCRIPTION

OUTLINE DRAWING Unit : millimeters

The MGFC38V5964 is an internally impedance-matched

GaAs power FET especially designed for use in 5.9 – 6.4

GHz band amplifiers. The hermetically sealed metal-ceramic

package guarantees high reliability.

21.0 +/-0.3

(1)

0.6 +/-0.15

FEATURES

Class A operation

Internally matched to 50(ohm) system

(2)

 High output power

R-1.6

P1dB=6W (TYP.) @f=5.9 – 6.4GHz

 High power gain

GLP=10dB (TYP.) @f=5.9 – 6.4GHz

 High power added efficiency

P.A.E.=32% (TYP.) @f=5.9 – 6.4GHz

 Low distortion [ item -51]

IM3=-45dBc (TYP.) @Po=27dBm S.C.L.

(3)

10.7

17.0 +/-0.2

APPLICATION

 item 01 : 5.9 – 6.4 GHz band power amplifier

 item 51 : 5.9 – 6.4 GHz band digital radio communication

QUALITY

 IG

12.0

RECOMMENDED BIAS CONDITIONS

 VDS=10V  ID=1.8A  RG=100ohm Refer to Bias Procedure

(1) GATE

(2) SOURCE (FLANGE)

(3) DRAIN

GF-8

Absolute maximum ratings (Ta=25C)

Keep Safety first in your circuit designs!

Mitsubishi Electric Corporation puts the maximum

effort into making semiconductor products better

and more reliable , but there is always the

possibility that trouble may occur with them.

Trouble with semiconductors may lead to personal

injury , fire or property damage. Remember to give

due consideration to safety when making your

circuit designs , with appropriate measure such

as (I) placement of substitutive , auxiliary circuits ,

(ii) use of non-flammable material or (iii) prevention

against any malfunction or mishap.

Symbol

Parameter

Ratings

Unit

Gate to drain

VGDO

breakdown voltage

-15

VGSO Gate to source breakdown voltage

-15

Drain current

-15

IGR

IGF

PT *1

Tch

Reverse gate current

Forward gate current

Total power dissipation

Cannel temperature

Storage temperature

31.5

175

C

Tstg

-65 to +175

*1 : Tc=25C

Electrical characteristics

(Ta=25C)

Symbol

Parameter

Test conditions

Limits

Typ.

Unit

Min.

Max.

Saturated drain current

Transconductance

VDS=3V,VGS=0V

IDSS

VDS=3V,ID=1.5A

VDS=3V,ID=15mA

Gate to source cut-off voltage

-3.5

-5

VGS(off)

P1dB

GLP

Output power at 1dB gain compression VDS=10V,ID(RF off)=1.8A

dBm

f=5.9 – 6.4GHz

Linear Power Gain

Drain current

1.7

P.A.E.

IM3*2

Rth(ch-c) *3

Power added efficiency

3rd order IM distortion

Thermal resistance

-42

-45

dBc

C/W

delta Vf method

*2 :Item-51,2-tone test Po=27dBm Signal Carrier Level f=6.4GHz Δf=10MHz

*3 :Channel-case

Publication Date : Apr., 2011

12 3

中文翻译

下载PDF

与MGFC38V5964_11相关器件

型号	品牌	获取价格	描述	数据表
MGFC38V5964_97	MITSUBISHI	获取价格	5.9 - 6.4GHz BAND 6W INTERNALLY MATCHED GaAs FET
MGFC38V5964-51	MITSUBISHI	获取价格	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction
MGFC38V6472	MITSUBISHI	获取价格	6.4 - 7.2GHz BAND 6W INTERNALLY MATCHED GaAs FET
MGFC38V6472_11	MITSUBISHI	获取价格	C band internally matched power GaAs FET
MGFC38V6472_97	MITSUBISHI	获取价格	6.4 - 7.2GHz BAND 6W INTERNALLY MATCHED GaAs FET
MGFC39V3436	MITSUBISHI	获取价格	3.4 - 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET
MGFC39V3436_04	MITSUBISHI	获取价格	3.4 ~ 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET
MGFC39V3436_11	MITSUBISHI	获取价格	C band internally matched power GaAs FET
MGFC39V3436-51	MITSUBISHI	获取价格	Transistor
MGFC39V3742A	MITSUBISHI	获取价格	3.7 - 4.2GHz BAND 8W INTERNALLY MATCHED GaAs FET

与MGFC38V5964_11相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

47
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

35
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

64
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

61

产品中心

服务支持

精选活动

关于我们

帮助中心

MGFC38V5964_11

MGFC38V5964_11 数据手册

与MGFC38V5964_11相关器件

与MGFC38V5964_11相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MGFC38V5964_11

MGFC38V5964_11 数据手册

与MGFC38V5964_11相关器件

与MGFC38V5964_11相关文章

您还可以找

您在本页遇到什么问题？