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MGFC36V7785A-01 PDF预览

MGFC36V7785A-01

更新时间： 2024-09-17 20:10:27
品牌 Logo 应用领域
三菱 - MITSUBISHI 局域网放大器晶体管
页数 文件大小 规格书
2页 126K
描述
RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET

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MGFC36V7785A-01 技术参数

生命周期：Obsolete包装说明：FLANGE MOUNT, R-CDFM-F2
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.84外壳连接：SOURCE
配置：SINGLE最大漏极电流 (Abs) (ID)：3.75 A
最大漏极电流 (ID)：3.75 AFET 技术：JUNCTION
最高频带：X BANDJESD-30 代码：R-CDFM-F2
元件数量：1端子数量：2
工作模式：DEPLETION MODE最高工作温度：175 °C
封装主体材料：CERAMIC, METAL-SEALED COFIRED封装形状：RECTANGULAR
封装形式：FLANGE MOUNT极性/信道类型：N-CHANNEL
功耗环境最大值：25 W最小功率增益 (Gp)：7 dB
认证状态：Not Qualified子类别：Other Transistors
表面贴装：YES端子形式：FLAT
端子位置：DUAL晶体管应用：AMPLIFIER
晶体管元件材料：GALLIUM ARSENIDEBase Number Matches：1

MGFC36V7785A-01 数据手册

 浏览型号MGFC36V7785A-01的Datasheet PDF文件第2页 
MITSUBISHI SEMICONDUCTOR <GaAs FET>  
MGFC36V7785A  
7.7 ~ 8.5GHz BAND 4W INTERNALLY MATCHED GaAs FET  
.
DESCRIPTION  
The MGFC36V7785A is an internally impedance-matched  
GaAs power FET especially designed for use in 7.7 ~ 8.5  
GHz band amplifiers.The hermetically sealed metal-ceramic  
package guarantees high reliability.  
OUTLINE DRAWING Unit : millimeters  
FEATURES  
Class A operation  
0.6 +/-0.15  
Internally matched to 50(ohm) system  
High output power  
(2)  
(2)  
P1dB = 4W (TYP.) @ f=7.7~8.5GHz  
High power gain  
R-1.6  
GLP = 8 dB (TYP.) @ f=7.7~8.5GHz  
High power added efficiency  
P.A.E. = 29 % (TYP.) @ f=7.7~8.5GHz  
Low distortion [ item -51 ]  
(3)  
IM3= -45 dBc(TYP.) @Po=25dBm S.C.L.  
APPLICATION  
item 01 : 7.7~8.5 GHz band power amplifier  
item 51 : 7.7~8.5 GHz band digital radio communication  
QUALITY GRADE  
IG  
RECOMMENDED BIAS CONDITIONS  
VDS = 10 (V)  
(1) GATE  
(2) SOURCE (FLANGE)  
(3) DRAIN  
GF-8  
ID = 1.2 (A)  
Refer to Bias Procedure  
RG= 100 (ohm)  
(Ta=25 deg.C)  
ABSOLUTE MAXIMUM RATINGS  
< Keep safety first in your circuit designs! >  
Symbol  
VGDO  
VGSO  
ID  
Parameter  
Gate to drain voltage  
Gate to source voltage  
Drain current  
Ratings  
Unit  
V
Mitsubishi Electric Corporation puts the maximum effort into  
making semiconductor products better and more reliable, but  
there is always the possibility that trouble may occur with them.  
Trouble with semiconductors may lead to personal injury, fire  
or property damage. Remember to give due consideration to  
safety when making your circuit designs, with appropriate  
measures such as (1)placement of substitutive, auxiliary  
circuits, (2)use of non-flammable material or (3)prevention  
against any malfunction or mishap.  
-15  
-15  
V
3.75  
-10  
A
IGR  
Reverse gate current  
Forward gate current  
Total power dissipation *1  
Channel temperature  
Storage temperature  
mA  
mA  
W
IGF  
21  
PT  
25  
Tch  
175  
deg.C  
deg.C  
Tstg  
-65 / +175  
*1 : Tc=25 deg.C  
(Ta=25 deg.C)  
ELECTRICAL CHARACTERISTICS  
Limits  
Symbol  
Parameter  
Test conditions  
Unit  
Min.  
Typ.  
Max.  
IDSS  
gm  
Saturated drain current  
Transconductance  
VDS=3V, VGS=0V  
VDS=3V, ID=1.1A  
VDS=3V, ID=10mA  
-
-
-
1
3.75  
A
S
-
VGS(off)  
P1dB  
GLP  
ID  
Gate to source cut-off voltage  
Output power at 1dB gain compression  
Linear power gain  
-
-
-4.5  
V
35  
7
36.5  
8
-
-
dBm  
dB  
VDS=10V, ID(RF off)=1.2A, f=7.7~8.5GHz  
Drain current  
-
-
1.8  
-
A
P.A.E.  
IM3  
Power added efficiency  
-
29  
-45  
5
%
3rd order IM distortion  
*1  
*2  
-42  
-
-
dBc  
deg.C/W  
Rth(ch-c) Thermal resistance  
Delta Vf method  
6
*1 : item -51, 2 tone test, Po=25dBm Single Carrier Level, f=8.5GHz, Delta f=10MHz  
*2 : Channel to case  
Oct-'03  
MITSUBISHI  
ELECTRIC  
12

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