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MCR706AT4G

更新时间： 2024-11-01 04:16:19
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安森美 - ONSEMI 栅
页数 文件大小 规格书
6页 67K
描述
Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors

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MCR706AT4G 数据手册

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MCR703A Series  
Preferred Device  
Sensitive Gate  
Silicon Controlled Rectifiers  
Reverse Blocking Thyristors  
PNPN devices designed for high volume, low cost consumer  
applications such as temperature, light and speed control; process and  
remote control; and warning systems where reliability of operation is  
critical.  
http://onsemi.com  
SCRs  
4.0 AMPERES RMS  
100 − 600 VOLTS  
Features  
• Small Size  
• Passivated Die Surface for Reliability and Uniformity  
• Low Level Triggering and Holding Characteristics  
• Recommend Electrical Replacement for C106  
• Surface Mount Package − Case 369C  
• To Obtain “DPAK” in Straight Lead Version (Shipped in Sleeves):  
Add ’1’ Suffix to Device Number, i.e., MCR706A1  
• Epoxy Meets UL 94 V−0 @ 0.125 in  
G
A
K
MARKING  
DIAGRAMS  
• ESD Ratings:  
Human Body Model, 3B u 8000 V  
Machine Model, C u 400 V  
4
DPAK  
CASE 369C  
STYLE 2  
YWW  
CR  
70xAG  
• Pb−Free Packages are Available  
2
1
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
3
Rating  
Symbol  
Max  
Unit  
Peak Repetitive Off−State Voltage (Note 1)  
V
V
V
DRM,  
RRM  
4
(T = −40 to +110°C, Sine Wave, 50 to 60 Hz,  
C
Gate Open)  
MCR703A  
MCR706A  
MCR708A  
100  
400  
600  
YWW  
CR  
70xAG  
DPAK−3  
CASE 369D  
STYLE 2  
Peak Non-Repetitive Off−State Voltage  
(Sine Wave, 50 to 60 Hz, Gate Open,  
V
V
RSM  
1
2
3
T
C
= −40 to +110°C)  
MCR703A  
MCR706A  
MCR708A  
150  
450  
650  
Y
= Year  
WW = Work Week  
70xA = Device Code  
x = 3, 6 or 8  
On−State RMS Current  
(180° Conduction Angles; T = 90°C)  
I
4.0  
A
A
T(RMS)  
C
G
= Pb−Free Package  
Average On−State Current (180° Conduction  
I
T(AV)  
Angles)  
T
C
T
C
= −40 to +90°C  
= +100°C  
2.6  
1.6  
PIN ASSIGNMENT  
Gate  
Non-Repetitive Surge Current  
I
A
TSM  
1
(1/2 Sine Wave, 60 Hz, T = 110°C)  
(1/2 Sine Wave, 1.5 ms, T = 110°C)  
25  
35  
J
J
2
3
4
Anode  
2
2
Circuit Fusing (t = 8.3 msec)  
I t  
2.6  
0.5  
A sec  
Cathode  
Forward Peak Gate Power  
P
W
W
A
GM  
Anode  
(Pulse Width ≤ 1.0 ꢀ sec, T = 90°C)  
C
Forward Average Gate Power  
P
0.1  
0.2  
G(AV)  
(t = 8.3 msec, T = 90°C)  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
C
Forward Peak Gate Current  
I
GM  
(Pulse Width ≤ 1.0 ꢀ sec, T = 90°C)  
C
Operating Junction Temperature Range  
Storage Temperature Range  
T
−40 to +110  
−40 to +150  
°C  
°C  
J
Preferred devices are recommended choices for future use  
and best overall value.  
T
stg  
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the  
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect  
device reliability.  
1. V  
and V  
for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate  
DRM  
RRM  
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current  
source such that the voltage ratings of the devices are exceeded.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
November, 2007 − Rev. 7  
MCR703A/D  
 
123456

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MCR706AT4G 替代型号

型号 品牌 替代类型 描述 数据表
MCR706AT4 ONSEMI

完全替代

 Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR718T4G ONSEMI

类似代替

 Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR716T4G ONSEMI

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 Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors

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