Datasheet > MCR708A

MCR708A

更新时间： 2024-09-09 11:04:23

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描述
Silicon Controlled Rectifiers

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MCR708A 数据手册

TIGER ELECTRONIC CO.,LTD

Product specification

MCR708A

Silicon Controlled Rectifiers

DESCRIPTION

PNPN devices designed for high volume, low cost consumer

applications such as temperature, light and speed control; process and

remote control; and warning systems where reliability of operation is

critical.

ABSOLUTE MAXIMUM RATINGS ( Ta = 25 ^OC)

Parameter

Symbol

Typ

Unit

Repetitive peak off-state

voltages

V_DRM

V_RRM

600

Average on-state current

RMS on-state current

I_T(AV)

2.6

4.0

I_T(RMS)

Non-repetitive peak

on-state current

I_TSM

Max. Operating Junction

Temperature

T_j

110

^oC

TO-252

Storage Temperature

T_stg

-45~150

( Ta = 25 ^OC)

ELECTRICAL CHARACTERISTICS

Parameter

Symbol

Test Conditions

Min

Typ

Max Unit

V_DRM

V_RRM

Repetitive peak off-state voltages

600

—

Average on-state current

RMS on-state current

I_T(AV)

half sine wave; T_mb< 103 ^oC

—

2.6

4.0

I_T(RMS)all conduction angles

—

2.2

5.0

8.0

On-state voltage

Holding current

V_TM

I =8.2A,tp=380 s

—

I_H

I_L

V_D=12 V; I_GT= 0.1 A

Latching current

Gate trigger current

Gate trigger voltage

I_GT

V_D=12 V; I_T= 0.1 A

V_GT

1.0

—

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