MCR716

更新时间： 2024-09-09 04:16:19

品牌	Logo	应用领域
TRSYS		栅极触发装置可控硅整流器
页数	文件大小	规格书
1页	142K
描述
Silicon Controlled Rectifier

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中文翻译

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技术参数
数据手册

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MCR716 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.66
Is Samacsys：	N	Base Number Matches：	1

MCR716 数据手册

MCR716, MCR718 SERIES

Silicon Controlled Rectifier

V_RRM= 400- 600V, I_F(RMS)= 4.0A

Case D-PAK Plastic

Symbol

MAXIMUM RATINGS (Tj = 25 C unless stated otherwise)

Symbol

MCR716

400

MCR718

Unit

Parameter

V_RRM

I_T(RMS)

I_TSM

Repetitive Peak Off-State Voltage

600

Volt

Amp

4.0 at tc = 90 C

On-State RMS Current

Peak Non-Repetitive Surge Current

2.6

A /S

I T for Fusing 8.3ms

I T

V_GRM

I_GM

Volt

Peak Reverse Gate Voltage

Peak Gate Current

0.2

0.1

Amp

Watt

P_G(AV)

Forward Average Gate Power

Forward Peak Gate Power

0.5

P_GM

T_(STG)

-40 to +150

Maximum Storage Temperature Range

Maximum Junction Temperature Range

-40 to +110

ELECTRICAL CHARACTERISICS at

Tj = 25 C Maximum. Unless stated Otherwise

Value

Typ

Condition

Symbol

Unit

Max

Min

Parameter

I_TM= 8.2 Amps

V_TM

Peak Forward On-State Voltage

Repetitive Peak Reverse Current

Gate Trigger Voltage

2.2

200

0.80

1.5

Volt

µA

V_R= V_RRM. t_J=110 C

I_RRM

V_GT

I_GT

I_L

Volt

0.30

1.0

0.55

µA

Gate Trigger Current

Latch Current

5.0

3.0

Holding Current

I_H

1.0

0.4

5.0

R_TH

C/W

Thermal Resistance (Junction to Case)

(J-c)

dV/dt

dA/dt

V/µS

A/µS

Rate of Rise of Off-State Voltage

Rate of Rise of Off-State Current

100

Mechanical

Dimensions

DIMENSIONS

Millimetres

Inches

Min Max

0.250 0.265

Dim

Min

6.35

2.60

Max

6.73

2.89 0.102 0.114

0.77

5.97

0.51

2.19

0.84

3.51

0.51

0.46

1.27

6.35

1.27

2.38

1.01

0..030 0.050

0.235 0.25

0.020 0.050

0.086 0.094

0.033 0.040

0.138

1 - Cathode

2 & 4 - Anode

3 - Gate

0.020

0.580 0.018 0.023

2.29 Pitch

0.94 1.19

0.69

0.09 Pitch

0.037 0.047

0.88 0.027

0.035

Case D-PAK Plastic

中文翻译

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