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MCR718T4G

更新时间： 2024-11-01 04:16:19
品牌 Logo 应用领域
安森美 - ONSEMI 栅极触发装置可控硅整流器PC
页数 文件大小 规格书
5页 61K
描述
Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors

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中文翻译

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MCR718T4G 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Transferred零件包装代码：TO-252
包装说明：LEAD FREE, PLASTIC, CASE 369C-01, DPAK-3针数：3
Reach Compliance Code：not_compliantHTS代码：8541.30.00.80
风险等级：5.08Is Samacsys：N
外壳连接：ANODE标称电路换相断开时间：2 µs
配置：SINGLE关态电压最小值的临界上升速率：5 V/us
最大直流栅极触发电流：0.075 mA最大直流栅极触发电压：1 V
最大维持电流：10 mAJESD-30 代码：R-PSSO-G2
JESD-609代码：e3湿度敏感等级：1
通态非重复峰值电流：25 A元件数量：1
端子数量：2最大通态电流：4000 A
最高工作温度：110 °C最低工作温度：-40 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
认证状态：Not Qualified最大均方根通态电流：4 A
断态重复峰值电压：600 V重复峰值反向电压：600 V
子类别：Silicon Controlled Rectifiers表面贴装：YES
端子面层：Tin (Sn)端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：40
触发设备类型：SCRBase Number Matches：1

MCR718T4G 数据手册

 浏览型号MCR718T4G的Datasheet PDF文件第2页浏览型号MCR718T4G的Datasheet PDF文件第3页浏览型号MCR718T4G的Datasheet PDF文件第4页浏览型号MCR718T4G的Datasheet PDF文件第5页 
MCR716, MCR718  
Preferred Device  
Sensitive Gate Silicon  
Controlled Rectifiers  
Reverse Blocking Thyristors  
Designed for high volume, low cost, industrial and consumer  
applications such as motor control, process control, temperature, light  
and speed control.  
http://onsemi.com  
SCRs  
4.0 AMPERES RMS  
400 − 600 VOLTS  
Features  
• Small Size  
• Passivated Die for Reliability and Uniformity  
• Low Level Triggering and Holding Characteristics  
• Surface Mount Lead Form − Case 369C  
G
A
K
• Epoxy Meets UL 94 V−0 @ 0.125 in  
• ESD Ratings: Human Body Model, 3B u 8000 V  
Machine Model, C u 400 V  
4
• Pb−Free Packages are Available  
2
1
3
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Symbol  
Value  
Unit  
DPAK  
CASE 369C  
STYLE 4  
Peak Repetitive Off−State Voltage  
V
V
V
DRM,  
(Note 1) (T = −40 to 110°C, Sine Wave,  
J
RRM  
50 to 60 Hz, Gate Open)  
MCR716  
MCR718  
400  
600  
MARKING DIAGRAM  
On−State RMS Current  
(180° Conduction Angles; T = 90°C)  
I
4.0  
2.6  
25  
A
A
A
T(RMS)  
C
Average On−State Current  
(180° Conduction Angles; T = 90°C)  
I
T(AV)  
YWW  
MCR  
71xG  
C
Peak Non-Repetitive Surge Current  
(1/2 Cycle, Sine Wave 60 Hz, T = 110°C)  
I
TSM  
J
2
2
Circuit Fusing Consideration (t = 8.3 msec)  
I t  
2.6  
0.5  
A sec  
Y
= Year  
Forward Peak Gate Power  
P
W
W
A
GM  
WW  
= Work Week  
(Pulse Width ≤ 1.0 ꢀ sec, T = 90°C)  
C
MCR71x = Device Code  
x= M or N  
Forward Average Gate Power  
P
0.1  
0.2  
G(AV)  
(t = 8.3 msec, T = 90°C)  
C
G
= Pb−Free Package  
Forward Peak Gate Current  
I
GM  
(Pulse Width ≤ 1.0 ꢀ sec, T = 90°C)  
C
PIN ASSIGNMENT  
Cathode  
Operating Junction Temperature Range  
Storage Temperature Range  
T
−40 to +110  
−40 to +150  
°C  
°C  
J
1
2
3
4
T
stg  
Anode  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
Gate  
Anode  
1. V  
and V  
for all types can be applied on a continuous basis. Ratings  
DRM  
RRM  
apply for zero or negative gate voltage; positive gate voltage shall not be  
applied concurrent with negative potential on the anode. Blocking voltages  
shall not be tested with a constant current source such that the voltage  
ratings of the devices are exceeded.  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
November, 2005 − Rev. 5  
MCR716/D  
 
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中文翻译

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MCR718T4G 替代型号

型号 品牌 替代类型 描述 数据表
MCR718T4 ONSEMI

完全替代

 Sensitive Gate Silicon Controlled Rectifiers(SCRs 4.0 AMPERES RMS 400 − 600 VOLTS)
MCR716T4G LITTELFUSE

类似代替

 该硅控整流器专门用于高容量、低成本的工业和消费应用，例如电机控制、过程控制以及温度、光线和
MCR706AT4G ONSEMI

类似代替

 Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors

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