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MCR716

更新时间： 2024-09-08 22:46:19
品牌 Logo 应用领域
安森美 - ONSEMI 栅极触发装置可控硅整流器
页数 文件大小 规格书
6页 71K
描述
Sensitive Gate Silicon Controlled Rectifiers(SCRs 4.0 AMPERES RMS 400 − 600 VOLTS)

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MCR716 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
Reach Compliance Code：not_compliantHTS代码：8541.30.00.80
风险等级：5.08Is Samacsys：N
外壳连接：ANODE标称电路换相断开时间：2 µs
配置：SINGLE关态电压最小值的临界上升速率：5 V/us
最大直流栅极触发电流：0.075 mA最大直流栅极触发电压：1 V
最大维持电流：10 mAJESD-30 代码：R-PSSO-G2
JESD-609代码：e0通态非重复峰值电流：25 A
元件数量：1端子数量：2
最大通态电流：4000 A最高工作温度：110 °C
最低工作温度：-40 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：240认证状态：Not Qualified
最大均方根通态电流：4 A断态重复峰值电压：400 V
重复峰值反向电压：400 V子类别：Silicon Controlled Rectifiers
表面贴装：YES端子面层：Tin/Lead (Sn/Pb)
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：30触发设备类型：SCR
Base Number Matches：1

MCR716 数据手册

 浏览型号MCR716的Datasheet PDF文件第2页浏览型号MCR716的Datasheet PDF文件第3页浏览型号MCR716的Datasheet PDF文件第4页浏览型号MCR716的Datasheet PDF文件第5页浏览型号MCR716的Datasheet PDF文件第6页 
MCR716, MCR718  
Preferred Device  
Sensitive Gate  
Silicon Controlled Rectifiers  
Reverse Blocking Thyristors  
Designed for high volume, low cost, industrial and consumer  
applications such as motor control, process control, temperature, light  
and speed control.  
http://onsemi.com  
SCRs  
4.0 AMPERES RMS  
400 − 600 VOLTS  
Features  
• Small Size  
• Passivated Die for Reliability and Uniformity  
• Low Level Triggering and Holding Characteristics  
• Surface Mount Lead Form − Case 369C  
• Epoxy Meets UL 94, V−0 @ 0.125 in  
G
A
K
• ESD Ratings: Human Body Model, 3B u 8000 V  
Machine Model, C u 400 V  
MARKING  
DIAGRAM  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Symbol  
Value  
Unit  
4
YWW  
MC  
R71x  
Peak Repetitive Off−State Voltage  
V
V
RRM  
V
DRM,  
DPAK  
CASE 369C  
STYLE 4  
(Note 1) (T = −40 to 110°C, Sine  
J
2
Wave, 50 to 60 Hz, Gate Open)  
MCR716  
1
3
400  
600  
MCR718  
On−State RMS Current  
(180° Conduction Angles; T = 90°C)  
I
4.0  
2.6  
25  
A
A
A
T(RMS)  
Y
WW  
x
= Year  
= Work Week  
= 6 or 8  
C
Average On−State Current  
(180° Conduction Angles; T = 90°C)  
I
T(AV)  
C
Peak Non-Repetitive Surge Current  
(1/2 Cycle, Sine Wave 60 Hz,  
T = 110°C)  
J
I
TSM  
PIN ASSIGNMENT  
Cathode  
1
2
3
4
Anode  
2
2
Circuit Fusing Consideration  
(t = 8.3 msec)  
I t  
2.6  
0.5  
0.1  
0.2  
A sec  
Gate  
Anode  
Forward Peak Gate Power  
(Pulse Width ≤ 1.0 m sec, T = 90°C)  
P
W
W
A
GM  
C
Forward Average Gate Power  
P
G(AV)  
ORDERING INFORMATION  
(t = 8.3 msec, T = 90°C)  
C
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
Forward Peak Gate Current  
I
GM  
(Pulse Width ≤ 1.0  
smec, T = 90°C)  
C
Preferred devices are recommended choices for future use  
and best overall value.  
Operating Junction Temperature Range  
Storage Temperature Range  
T
−40 to +110  
−40 to +150  
°C  
°C  
J
T
stg  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits  
are exceeded, device functional operation is not implied, damage may occur  
and reliability may be affected.  
1. V  
and V  
for all types can be applied on a continuous basis. Ratings  
DRM  
RRM  
apply for zero or negative gate voltage; positive gate voltage shall not be  
applied concurrent with negative potential on the anode. Blocking voltages  
shall not be tested with a constant current source such that the voltage  
ratings of the devices are exceeded.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
August, 2004 − Rev. 4  
MCR716/D  
 
123456

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