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MCR708ATR13 PDF预览

MCR708ATR13

更新时间: 2024-11-02 20:58:47
品牌 Logo 应用领域
CENTRAL 栅极
页数 文件大小 规格书
2页 36K
描述
Silicon Controlled Rectifier, 4A I(T)RMS, 4000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, PLASTIC, DPAK-3

MCR708ATR13 技术参数

生命周期:Active零件包装代码:TO-252
包装说明:SMALL OUTLINE, R-PSSO-G2针数:3
Reach Compliance Code:compliantHTS代码:8541.30.00.80
风险等级:5.63外壳连接:ANODE
配置:SINGLE关态电压最小值的临界上升速率:10 V/us
最大直流栅极触发电流:0.075 mA最大直流栅极触发电压:0.8 V
最大维持电流:2 mAJESD-30 代码:R-PSSO-G2
JESD-609代码:e0最大漏电流:0.2 mA
通态非重复峰值电流:15 A元件数量:1
端子数量:2最大通态电流:4000 A
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE认证状态:Not Qualified
最大均方根通态电流:4 A断态重复峰值电压:600 V
重复峰值反向电压:600 V子类别:Silicon Controlled Rectifiers
表面贴装:YES端子面层:TIN LEAD
端子形式:GULL WING端子位置:SINGLE
触发设备类型:SCRBase Number Matches:1

MCR708ATR13 数据手册

 浏览型号MCR708ATR13的Datasheet PDF文件第2页 
TM  
Central  
MCR703A MCR704A  
MCR706A MCR708A  
Semiconductor Corp.  
4.0 AMP SCR  
100 THRU 600 VOLTS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR MCR703A,  
MCR704A, MCR706A, and MCR708A are epoxy  
molded Silicon Controlled Rectifiers designed for  
sensing circuit applications and control systems.  
MARKING CODE: FULL PART NUMBER  
DPAK THYRISTOR CASE  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
C
SYMBOL  
MCR703A MCR704A MCR706A MCR708A UNITS  
Peak Repetitive Off-State Voltage  
V
I
V
100  
200  
400  
600  
V
DRM, RRM  
RMS On-State Current (T =85°C)  
C
Peak non-Repetitive Surge Current  
(1/2 cycle Sine wave, 50Hz/60Hz)  
4.0  
15  
A
A
T(RMS)  
I
TSM  
I2t Value for Fusing (t=10ms)  
Peak Gate Power (tp=1µs)  
Average Gate Power Dissipation  
Peak Gate Current (tp=1µs)  
I2t  
P
1.1  
0.5  
0.1  
0.2  
50  
A2s  
W
GM  
P
I
W
G(AV)  
A
GM  
Critical Rate of Rise of On-State Current di/dt  
A/µs  
°C  
°C  
Storage Temperature  
Junction Temperature  
T
T
-40 to +150  
-40 to +125  
stg  
J
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
C
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
µA  
I
I
I
I
I
Rated V  
Rated V  
V
R
=1KΩ  
10  
200  
75  
DRM, RRM  
DRM, RRM, GK  
, V  
I
R
=1KΩ, T =125°C  
µA  
DRM, RRM  
DRM RRM, GK  
C
V =12V, R =10Ω  
38  
µA  
GT  
H
D
L
I =50mA, R =1KΩ  
GK  
0.25  
0.55  
1.6  
2.0  
0.8  
1.8  
mA  
V
T
V
V =12V, R =10Ω  
GT  
TM  
D
L
V
I
=8.0A, tp=380µs  
2
V
TM  
dv/dt  
V = / V  
R
=1KΩ, T =125°C  
10  
V/µs  
3
D
DRM, GK  
C
R0 (9-May 2005)  

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