MCR718PBFREE

更新时间： 2024-11-01 13:02:35

品牌	Logo	应用领域
CENTRAL		栅极触发装置可控硅整流器
页数	文件大小	规格书
2页	470K
描述
Silicon Controlled Rectifier,

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中文翻译

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技术参数
数据手册

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MCR718PBFREE 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.65	JESD-609代码：	e3
峰值回流温度（摄氏度）：	NOT SPECIFIED	端子面层：	MATTE TIN OVER NICKEL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	触发设备类型：	SCR
Base Number Matches：	1

MCR718PBFREE 数据手册

MCR716

MCR718

www.centralsemi.com

SURFACE MOUNT

SILICON CONTROLLED RECTIFIER

4 AMP, 400 THRU 600 VOLTS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR MCR716 and

MCR718 are epoxy molded Silicon Controlled

Rectifiers designed for sensing circuit applications and

control systems.

MARKING: FULL PART NUMBER

DPAK THYRISTOR CASE

MAXIMUM RATINGS: (T =25°C unless otherwise noted)

SYMBOL

MCR716

MCR718

UNITS

Peak Repetitive Off-State Voltage

400

600

DRM, RRM

RMS On-State Current (T =85°C)

4.0

T(RMS)

Peak non-Repetitive Surge Current

(1/2 cycle Sine wave, 50Hz/60Hz)

A²s

TSM

I²t

I t Value for Fusing, t=10ms

1.1

Peak Gate Power, tp=1.0μs

Average Gate Power Dissipation

Peak Gate Current, tp=1.0μs

Critical Rate of Rise of On-State Current

Storage Temperature

0.5

0.1

0.2

G(AV)

di/dt

A/μs

°C

-40 to +150

-40 to +125

stg

Junction Temperature

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

μA

Rated V

=1.0KΩ

DRM, RRM

DRM, RRM, GK

Rated V

=1.0KΩ, T =125°C

200

μA

DRM, RRM

DRM, RRM, GK

V =12V, R =10Ω

1.0

μA

I =50mA, R =1.0KΩ

0.25

0.55

1.6

2.0

0.8

1.8

V =12V, R =10Ω

=8.0A, tp=380μs

dv/dt

V = / V

=1.0KΩ, T =125°C

V/μs

DRM, GK

R1 (1-March 2010)

中文翻译

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