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MCR72-006 PDF预览

MCR72-006

更新时间： 2024-11-01 19:40:11
品牌 Logo 应用领域
安森美 - ONSEMI 栅
页数 文件大小 规格书
7页 127K
描述
Sensitive Gate Silicon Controlled Rectifier - SCR, TO-220 3 LEAD STANDARD, 500-BLKBX

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中文翻译

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MCR72-006 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Obsolete针数：3
Reach Compliance Code：not_compliantECCN代码：EAR99
风险等级：5.68JESD-609代码：e0
端子面层：Tin/Lead (Sn/Pb)触发设备类型：SCR
Base Number Matches：1

MCR72-006 数据手册

 浏览型号MCR72-006的Datasheet PDF文件第2页浏览型号MCR72-006的Datasheet PDF文件第3页浏览型号MCR72-006的Datasheet PDF文件第4页浏览型号MCR72-006的Datasheet PDF文件第5页浏览型号MCR72-006的Datasheet PDF文件第6页浏览型号MCR72-006的Datasheet PDF文件第7页 
MCR72-3, MCR72-6,  
MCR72-8  
Preferred Device  
Sensitive Gate Silicon  
Controlled Rectifiers  
Reverse Blocking Thyristors  
Designed for industrial and consumer applications such as  
temperature, light and speed control; process and remote controls;  
warning systems; capacitive discharge circuits and MPU interface.  
http://onsemi.com  
SCRs  
Features  
8 AMPERES RMS  
100 thru 600 VOLTS  
• Center Gate Geometry for Uniform Current Density  
• All Diffused and Glass-Passivated Junctions for Parameter  
Uniformity and Stability  
• Small, Rugged Thermowatt Construction for Low Thermal  
Resistance, High Heat Dissipation and Durability  
• Low Trigger Currents, 200 mA Maximum for Direct Driving from  
Integrated Circuits  
G
A
K
• Pb−Free Packages are Available*  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Off−State Voltage (Note 1)  
V
V
DRM,  
RRM  
(T = *40 to 110°C, Sine Wave,  
V
J
TO−220AB  
CASE 221A−07  
STYLE 3  
50 Hz to 60 Hz)  
MCR72−3  
MCR72−6  
MCR72−8  
100  
400  
600  
1
2
3
On-State RMS Current  
I
8.0  
A
A
T(RMS)  
(180° Conduction Angles; T = 83°C)  
C
Peak Non-Repetitive Surge Current  
I
100  
TSM  
(1/2 Cycle, 60 Hz, T = 110°C)  
J
2
2
Circuit Fusing Considerations (t = 8.3 ms)  
I t  
40  
A s  
Forward Peak Gate Voltage  
V
"5.0  
V
A
GM  
TO−220AB  
CASE 221A−09  
STYLE 3  
(t ≤ 10 ms, T = 83°C)  
C
Forward Peak Gate Current  
I
1.0  
5.0  
GM  
(t ≤ 10 ms, T = 83°C)  
C
1
2
3
Forward Peak Gate Power  
P
GM  
W
W
(t ≤ 10 ms, T = 83°C)  
C
Average Gate Power (t = 8.3 ms, T  
83°C)  
=
P
G(AV)  
0.75  
C
PIN ASSIGNMENT  
Operating Junction Temperature Range  
Storage Temperature Range  
Mounting Torque  
T
−40 to +110  
−40 to +150  
8.0  
°C  
°C  
J
1
Cathode  
Anode  
Gate  
T
stg  
2
3
4
−
in. lb.  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
Anode  
1. V  
and V  
for all types can be applied on a continuous basis. Ratings  
DRM  
RRM  
MARKING AND ORDERING INFORMATION  
See detailed marking, ordering, and shipping information in  
the package dimensions section on page 5 of this data sheet.  
apply for zero or negative gate voltage; however, positive gate voltage shall  
not be applied concurrent with negative potential on the anode. Blocking  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 20008  
1
Publication Order Number:  
November, 2008 − Rev. 4  
MCR72/D  
 
1234567

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