Datasheet > MCR72-1

MCR72-1

更新时间： 2024-11-02 01:04:07

品牌	Logo	应用领域
DIGITRON		/
页数	文件大小	规格书
3页	223K
描述
SILICON CONTROLLED RECTIFIERS

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MCR72-1 数据手册

D I G I T R O N S E M I C O N D U C T O R S

MCR72 SERIES

SILICON CONTROLLED RECTIFIERS

Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).

Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Peak repetitive off-state voltage⁽¹⁾

(T_J= -40 to +110°C, sine wave, 50 to 60Hz, gate open)

MCR72-1

MCR72-2

MCR72-3

MCR72-4

MCR72-5

MCR72-6

MCR72-7

MCR72-8

V_DRM

V_RRM

100

200

300

400

500

600

On-state RMS current (180° conduction angles, T_C= 83°C)

I_T(RMS)

I_TSM

8.0

Peak non-repetitive surge current

(half-cycle, sine wave, 60Hz, T_J= 110°C)

100

Circuit fusing consideration (t = 8.3ms)

Forward peak gate voltage (t ≤ 10µs, T_C= 83°C)

Forward peak gate current (t ≤ 10µs, T_C= 83°C)

Forward peak gate power (pulse width ≤ 10µs, T_C= 83°C)

Average gate power (t = 8.3ms, T_C= 83°C)

Operating junction temperature range

Storage temperature range

I²t

V_GM

I_GM

P_GM

P_G(AV)

T_J

A²s

±5.0

1.0

5.0

0.75

-40 to +110

-40 to +150

8.0

°C

T_stg

°C

Mounting torque

In. lb.

Note 1: V_DRMand V_RRMfor all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent

with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

THERMAL CHARACTERISTICS

Characteristic

Symbol

R_ӨJC

Maximum

Unit

°C/W

Thermal resistance, junction to case

Thermal resistance, junction to ambient

2.2

R_ӨJA

Lead solder temperature

T_L

°C

(lead length 1/8” from case, 10s max)

260

ELECTRICAL CHARACTERISTICS (T_J= 25°C, unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Peak forward or reverse blocking current⁽²⁾

(V_AK= Rated V_DRMor V_RRM, R_GK= 1kΩ)

T_C= 25°C

I_DRM,

I_RRM

µA

T_C= 110°C

500

ON CHARACTERISTICS

Peak forward on-state voltage

V_TM

µA

(I_TM= 16A, pulse width ≤ 1ms, duty cycle ≤ 2%)

1.7

2.0

200

1.5

Gate trigger current (continuous dc)⁽³⁾

(V_D= 12V, R_L= 100Ω)

Gate trigger voltage (continuous dc)⁽³⁾

(V_D= 12V, R_L= 100Ω)

I_GT

V_GT

0.5

phone +1.908.245-7200

fax +1.908.245-0555

sales@digitroncorp.com

www.digitroncorp.com

144 Market Street

Kenilworth NJ 07033 USA

Rev. 20130115

12 3

中文翻译

下载PDF

与MCR72-1相关器件

型号	品牌	获取价格	描述	数据表
MCR72-10	NJSEMI	获取价格	Silicon Controlled Rectifiers
MCR72-10-16	MOTOROLA	获取价格	8A, 800V, SCR, TO-220AB, TO-220, 2 PIN
MCR72-10-A16A	MOTOROLA	获取价格	8A, 800V, SCR, TO-220AB, TO-220, 3 PIN
MCR72-10-AF	MOTOROLA	获取价格	Silicon Controlled Rectifier, 8A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-220AB
MCR72-10-AK	MOTOROLA	获取价格	8A, 800V, SCR, TO-220AB
MCR72-10-AN	MOTOROLA	获取价格	Silicon Controlled Rectifier, 8A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-220AB
MCR72-10-AS	MOTOROLA	获取价格	Silicon Controlled Rectifier, 8A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-220AB
MCR72-10-AU	MOTOROLA	获取价格	8A, 800V, SCR, TO-220AB
MCR72-10-BA	MOTOROLA	获取价格	Silicon Controlled Rectifier, 8A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-220AB
MCR72-10-BC	MOTOROLA	获取价格	Silicon Controlled Rectifier, 8A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-220AB

与MCR72-1相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

4
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

2
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

23
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

24

产品中心

服务支持

精选活动

关于我们

帮助中心

MCR72-1

MCR72-1 数据手册

与MCR72-1相关器件

与MCR72-1相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MCR72-1

MCR72-1 数据手册

与MCR72-1相关器件

与MCR72-1相关文章

您还可以找

您在本页遇到什么问题？