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MCR72_05

更新时间： 2024-09-14 04:16:23
品牌 Logo 应用领域
安森美 - ONSEMI 栅
页数 文件大小 规格书
6页 64K
描述
Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors

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MCR72_05 数据手册

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MCR72−3, MCR72−6,  
MCR72−8  
Preferred Device  
Sensitive Gate Silicon  
Controlled Rectifiers  
Reverse Blocking Thyristors  
Designed for industrial and consumer applications such as  
temperature, light and speed control; process and remote controls;  
warning systems; capacitive discharge circuits and MPU interface.  
http://onsemi.com  
SCRs  
Features  
8 AMPERES RMS  
100 thru 600 VOLTS  
• Center Gate Geometry for Uniform Current Density  
• All Diffused and Glass-Passivated Junctions for Parameter  
Uniformity and Stability  
• Small, Rugged Thermowatt Construction for Low Thermal  
Resistance, High Heat Dissipation and Durability  
• Low Trigger Currents, 200 mA Maximum for Direct Driving from  
Integrated Circuits  
G
A
K
• Pb−Free Packages are Available*  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Off−State Voltage (Note 1)  
V
V
V
DRM,  
RRM  
(T = *40 to 110°C, Sine Wave,  
J
TO−220AB  
CASE 221A−07  
STYLE 3  
50 to 60 Hz, Gate Open)  
MCR72−3  
MCR72−6  
MCR72−8  
100  
400  
600  
1
2
3
On-State RMS Current  
(180° Conduction Angles; T = 83°C)  
I
8.0  
A
A
T(RMS)  
C
Peak Non-Repetitive Surge Current  
I
100  
TSM  
(1/2 Cycle, 60 Hz, T = 110°C)  
J
2
2
Circuit Fusing Considerations (t = 8.3 ms)  
I t  
40  
A s  
Forward Peak Gate Voltage  
V
"5.0  
V
A
GM  
TO−220AB  
CASE 221A−09  
STYLE 3  
(t ≤ 10 ms, T = 83°C)  
C
Forward Peak Gate Current  
I
1.0  
5.0  
GM  
(t ≤ 10 ms, T = 83°C)  
C
1
2
3
Forward Peak Gate Power  
P
W
GM  
(t ≤ 10 ms, T = 83°C)  
C
Average Gate Power (t = 8.3 ms, T = 83°C)  
P
0.75  
−40 to +110  
−40 to +150  
8.0  
W
°C  
C
G(AV)  
PIN ASSIGNMENT  
Operating Junction Temperature Range  
Storage Temperature Range  
Mounting Torque  
T
J
1
Cathode  
Anode  
Gate  
T
°C  
stg  
2
3
4
−
in. lb.  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
Anode  
1. V  
and V  
for all types can be applied on a continuous basis. Ratings  
DRM  
RRM  
MARKING AND ORDERING INFORMATION  
See detailed marking, ordering, and shipping information in  
the package dimensions section on page 4 of this data sheet.  
apply for zero or negative gate voltage; however, positive gate voltage shall  
not be applied concurrent with negative potential on the anode. Blocking  
voltages shall not be tested with a constant current source such that the  
voltage ratings of the devices are exceeded.  
Preferred devices are recommended choices for future use  
and best overall value.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 20005  
1
Publication Order Number:  
December, 2005 − Rev. 3  
MCR72/D  
 
123456

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