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MCR718RL

更新时间： 2024-09-14 13:01:07
品牌 Logo 应用领域
安森美 - ONSEMI 栅极触发装置可控硅整流器
页数 文件大小 规格书
5页 61K
描述
MCR718RL

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中文翻译

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MCR718RL 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：SM-3Reach Compliance Code：not_compliant
风险等级：5.85标称电路换相断开时间：2 µs
关态电压最小值的临界上升速率：5 V/us最大直流栅极触发电流：0.3 mA
最大直流栅极触发电压：1 V最大维持电流：10 mA
JESD-609代码：e0湿度敏感等级：1
通态非重复峰值电流：25 A最大通态电流：4000 A
最高工作温度：110 °C最低工作温度：-40 °C
断态重复峰值电压：600 V子类别：Silicon Controlled Rectifiers
表面贴装：YES端子面层：Tin/Lead (Sn/Pb)
触发设备类型：SCRBase Number Matches：1

MCR718RL 数据手册

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MCR716, MCR718  
Preferred Device  
Sensitive Gate Silicon  
Controlled Rectifiers  
Reverse Blocking Thyristors  
Designed for high volume, low cost, industrial and consumer  
applications such as motor control, process control, temperature, light  
and speed control.  
http://onsemi.com  
SCRs  
4.0 AMPERES RMS  
400 − 600 VOLTS  
Features  
• Small Size  
• Passivated Die for Reliability and Uniformity  
• Low Level Triggering and Holding Characteristics  
• Surface Mount Lead Form − Case 369C  
G
A
K
• Epoxy Meets UL 94 V−0 @ 0.125 in  
• ESD Ratings: Human Body Model, 3B u 8000 V  
Machine Model, C u 400 V  
4
• Pb−Free Packages are Available  
2
1
3
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Symbol  
Value  
Unit  
DPAK  
CASE 369C  
STYLE 4  
Peak Repetitive Off−State Voltage  
V
V
V
DRM,  
(Note 1) (T = −40 to 110°C, Sine Wave,  
J
RRM  
50 to 60 Hz, Gate Open)  
MCR716  
MCR718  
400  
600  
MARKING DIAGRAM  
On−State RMS Current  
(180° Conduction Angles; T = 90°C)  
I
4.0  
2.6  
25  
A
A
A
T(RMS)  
C
Average On−State Current  
(180° Conduction Angles; T = 90°C)  
I
T(AV)  
YWW  
MCR  
71xG  
C
Peak Non-Repetitive Surge Current  
(1/2 Cycle, Sine Wave 60 Hz, T = 110°C)  
I
TSM  
J
2
2
Circuit Fusing Consideration (t = 8.3 msec)  
I t  
2.6  
0.5  
A sec  
Y
= Year  
Forward Peak Gate Power  
P
W
W
A
GM  
WW  
= Work Week  
(Pulse Width ≤ 1.0 ꢀ sec, T = 90°C)  
C
MCR71x = Device Code  
x= M or N  
Forward Average Gate Power  
P
0.1  
0.2  
G(AV)  
(t = 8.3 msec, T = 90°C)  
C
G
= Pb−Free Package  
Forward Peak Gate Current  
I
GM  
(Pulse Width ≤ 1.0 ꢀ sec, T = 90°C)  
C
PIN ASSIGNMENT  
Cathode  
Operating Junction Temperature Range  
Storage Temperature Range  
T
−40 to +110  
−40 to +150  
°C  
°C  
J
1
2
3
4
T
stg  
Anode  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
Gate  
Anode  
1. V  
and V  
for all types can be applied on a continuous basis. Ratings  
DRM  
RRM  
apply for zero or negative gate voltage; positive gate voltage shall not be  
applied concurrent with negative potential on the anode. Blocking voltages  
shall not be tested with a constant current source such that the voltage  
ratings of the devices are exceeded.  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
November, 2005 − Rev. 5  
MCR716/D  
 
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