是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Transferred | 零件包装代码: | TO-252 |
包装说明: | IN-LINE, R-PSIP-T3 | 针数: | 4 |
Reach Compliance Code: | not_compliant | HTS代码: | 8541.30.00.80 |
Factory Lead Time: | 1 week | 风险等级: | 5.1 |
Is Samacsys: | N | 外壳连接: | ANODE |
配置: | SINGLE | 关态电压最小值的临界上升速率: | 10 V/us |
最大直流栅极触发电流: | 0.075 mA | 最大直流栅极触发电压: | 1 V |
最大维持电流: | 10 mA | JESD-30 代码: | R-PSIP-T3 |
JESD-609代码: | e3 | 最大漏电流: | 0.2 mA |
通态非重复峰值电流: | 25 A | 元件数量: | 1 |
端子数量: | 3 | 最大通态电流: | 2600 A |
最高工作温度: | 110 °C | 最低工作温度: | -40 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 峰值回流温度(摄氏度): | 260 |
认证状态: | Not Qualified | 最大均方根通态电流: | 4 A |
断态重复峰值电压: | 600 V | 重复峰值反向电压: | 600 V |
子类别: | Silicon Controlled Rectifiers | 表面贴装: | NO |
端子面层: | Tin (Sn) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | 40 |
触发设备类型: | SCR | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MCR708AG | ONSEMI |
获取价格 |
Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors |
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MCR708ALEADFREE | CENTRAL |
获取价格 |
Silicon Controlled Rectifier, 4A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, PLASTIC, DP |
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MCR708APBFREE | CENTRAL |
获取价格 |
Silicon Controlled Rectifier, |
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MCR708ARL | ONSEMI |
获取价格 |
Silicon Controlled Rectifier, 4A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element |
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MCR708AT4 | ONSEMI |
获取价格 |
Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors |
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MCR708AT4 | MOTOROLA |
获取价格 |
4A, 600V, SCR, DPAK-3 |
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MCR708AT4G | ONSEMI |
获取价格 |
Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors |
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MCR708ATR13 | CENTRAL |
获取价格 |
Silicon Controlled Rectifier, 4A I(T)RMS, 4000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element |
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MCR70-A | DIGITRON |
获取价格 |
55 AMP SILICON CONTROLLED RECTIFIER |
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MCR716 | ONSEMI |
获取价格 |
Sensitive Gate Silicon Controlled Rectifiers(SCRs 4.0 AMPERES RMS 400 − 600 VOLTS) |
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