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MCR708A1G

更新时间： 2024-09-09 04:16:19
品牌 Logo 应用领域
安森美 - ONSEMI 栅极触发装置可控硅整流器
页数 文件大小 规格书
6页 67K
描述
Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors

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中文翻译

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MCR708A1G 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Transferred零件包装代码：TO-252
包装说明：IN-LINE, R-PSIP-T3针数：4
Reach Compliance Code：not_compliantHTS代码：8541.30.00.80
Factory Lead Time：1 week风险等级：5.1
Is Samacsys：N外壳连接：ANODE
配置：SINGLE关态电压最小值的临界上升速率：10 V/us
最大直流栅极触发电流：0.075 mA最大直流栅极触发电压：1 V
最大维持电流：10 mAJESD-30 代码：R-PSIP-T3
JESD-609代码：e3最大漏电流：0.2 mA
通态非重复峰值电流：25 A元件数量：1
端子数量：3最大通态电流：2600 A
最高工作温度：110 °C最低工作温度：-40 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：IN-LINE峰值回流温度（摄氏度）：260
认证状态：Not Qualified最大均方根通态电流：4 A
断态重复峰值电压：600 V重复峰值反向电压：600 V
子类别：Silicon Controlled Rectifiers表面贴装：NO
端子面层：Tin (Sn)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：40
触发设备类型：SCRBase Number Matches：1

MCR708A1G 数据手册

 浏览型号MCR708A1G的Datasheet PDF文件第2页浏览型号MCR708A1G的Datasheet PDF文件第3页浏览型号MCR708A1G的Datasheet PDF文件第4页浏览型号MCR708A1G的Datasheet PDF文件第5页浏览型号MCR708A1G的Datasheet PDF文件第6页 
MCR703A Series  
Preferred Device  
Sensitive Gate  
Silicon Controlled Rectifiers  
Reverse Blocking Thyristors  
PNPN devices designed for high volume, low cost consumer  
applications such as temperature, light and speed control; process and  
remote control; and warning systems where reliability of operation is  
critical.  
http://onsemi.com  
SCRs  
4.0 AMPERES RMS  
100 − 600 VOLTS  
Features  
• Small Size  
• Passivated Die Surface for Reliability and Uniformity  
• Low Level Triggering and Holding Characteristics  
• Recommend Electrical Replacement for C106  
• Surface Mount Package − Case 369C  
• To Obtain “DPAK” in Straight Lead Version (Shipped in Sleeves):  
Add ’1’ Suffix to Device Number, i.e., MCR706A1  
• Epoxy Meets UL 94 V−0 @ 0.125 in  
G
A
K
MARKING  
DIAGRAMS  
• ESD Ratings:  
Human Body Model, 3B u 8000 V  
Machine Model, C u 400 V  
4
DPAK  
CASE 369C  
STYLE 2  
YWW  
CR  
70xAG  
• Pb−Free Packages are Available  
2
1
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
3
Rating  
Symbol  
Max  
Unit  
Peak Repetitive Off−State Voltage (Note 1)  
V
V
V
DRM,  
RRM  
4
(T = −40 to +110°C, Sine Wave, 50 to 60 Hz,  
C
Gate Open)  
MCR703A  
MCR706A  
MCR708A  
100  
400  
600  
YWW  
CR  
70xAG  
DPAK−3  
CASE 369D  
STYLE 2  
Peak Non-Repetitive Off−State Voltage  
(Sine Wave, 50 to 60 Hz, Gate Open,  
V
V
RSM  
1
2
3
T
C
= −40 to +110°C)  
MCR703A  
MCR706A  
MCR708A  
150  
450  
650  
Y
= Year  
WW = Work Week  
70xA = Device Code  
x = 3, 6 or 8  
On−State RMS Current  
(180° Conduction Angles; T = 90°C)  
I
4.0  
A
A
T(RMS)  
C
G
= Pb−Free Package  
Average On−State Current (180° Conduction  
I
T(AV)  
Angles)  
T
C
T
C
= −40 to +90°C  
= +100°C  
2.6  
1.6  
PIN ASSIGNMENT  
Gate  
Non-Repetitive Surge Current  
I
A
TSM  
1
(1/2 Sine Wave, 60 Hz, T = 110°C)  
(1/2 Sine Wave, 1.5 ms, T = 110°C)  
25  
35  
J
J
2
3
4
Anode  
2
2
Circuit Fusing (t = 8.3 msec)  
I t  
2.6  
0.5  
A sec  
Cathode  
Forward Peak Gate Power  
P
W
W
A
GM  
Anode  
(Pulse Width ≤ 1.0 ꢀ sec, T = 90°C)  
C
Forward Average Gate Power  
P
0.1  
0.2  
G(AV)  
(t = 8.3 msec, T = 90°C)  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
C
Forward Peak Gate Current  
I
GM  
(Pulse Width ≤ 1.0 ꢀ sec, T = 90°C)  
C
Operating Junction Temperature Range  
Storage Temperature Range  
T
−40 to +110  
−40 to +150  
°C  
°C  
J
Preferred devices are recommended choices for future use  
and best overall value.  
T
stg  
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the  
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect  
device reliability.  
1. V  
and V  
for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate  
DRM  
RRM  
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current  
source such that the voltage ratings of the devices are exceeded.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
November, 2007 − Rev. 7  
MCR703A/D  
 
123456

中文翻译

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