MCR708AT4

更新时间： 2024-09-09 04:16:19

品牌	Logo	应用领域
安森美 - ONSEMI		栅
页数	文件大小	规格书
6页	67K
描述
Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors

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中文翻译

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MCR708AT4 数据手册

MCR703A Series

Preferred Device

Sensitive Gate

Silicon Controlled Rectifiers

Reverse Blocking Thyristors

PNPN devices designed for high volume, low cost consumer

applications such as temperature, light and speed control; process and

remote control; and warning systems where reliability of operation is

critical.

http://onsemi.com

SCRs

4.0 AMPERES RMS

100 − 600 VOLTS

Features

• Small Size

• Passivated Die Surface for Reliability and Uniformity

• Low Level Triggering and Holding Characteristics

• Recommend Electrical Replacement for C106

• Surface Mount Package − Case 369C

• To Obtain “DPAK” in Straight Lead Version (Shipped in Sleeves):

Add ’1’ Suffix to Device Number, i.e., MCR706A1

• Epoxy Meets UL 94 V−0 @ 0.125 in

MARKING

DIAGRAMS

• ESD Ratings:

Human Body Model, 3B u 8000 V

Machine Model, C u 400 V

DPAK

CASE 369C

STYLE 2

YWW

70xAG

• Pb−Free Packages are Available

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Max

Unit

Peak Repetitive Off−State Voltage (Note 1)

DRM,

RRM

(T = −40 to +110°C, Sine Wave, 50 to 60 Hz,

Gate Open)

MCR703A

MCR706A

MCR708A

100

400

600

YWW

70xAG

DPAK−3

CASE 369D

STYLE 2

Peak Non-Repetitive Off−State Voltage

(Sine Wave, 50 to 60 Hz, Gate Open,

RSM

= −40 to +110°C)

MCR703A

MCR706A

MCR708A

150

450

650

= Year

WW = Work Week

70xA = Device Code

x = 3, 6 or 8

On−State RMS Current

(180° Conduction Angles; T = 90°C)

4.0

T(RMS)

= Pb−Free Package

Average On−State Current (180° Conduction

T(AV)

Angles)

= −40 to +90°C

= +100°C

2.6

1.6

PIN ASSIGNMENT

Gate

Non-Repetitive Surge Current

TSM

(1/2 Sine Wave, 60 Hz, T = 110°C)

(1/2 Sine Wave, 1.5 ms, T = 110°C)

Anode

Circuit Fusing (t = 8.3 msec)

I t

2.6

0.5

A sec

Cathode

Forward Peak Gate Power

Anode

(Pulse Width ≤ 1.0 ꢀ sec, T = 90°C)

Forward Average Gate Power

0.1

0.2

G(AV)

(t = 8.3 msec, T = 90°C)

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

Forward Peak Gate Current

(Pulse Width ≤ 1.0 ꢀ sec, T = 90°C)

Operating Junction Temperature Range

Storage Temperature Range

−40 to +110

−40 to +150

°C

Preferred devices are recommended choices for future use

and best overall value.

stg

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

1. V

and V

for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate

DRM

RRM

voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current

source such that the voltage ratings of the devices are exceeded.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

November, 2007 − Rev. 7

MCR703A/D

12 3 4 5 6

中文翻译

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与MCR708AT4相关器件

型号	品牌	获取价格	描述	数据表
MCR708AT4G	ONSEMI	获取价格	Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR708ATR13	CENTRAL	获取价格	Silicon Controlled Rectifier, 4A I(T)RMS, 4000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element
MCR70-A	DIGITRON	获取价格	55 AMP SILICON CONTROLLED RECTIFIER
MCR716	ONSEMI	获取价格	Sensitive Gate Silicon Controlled Rectifiers(SCRs 4.0 AMPERES RMS 400 − 600 VOLTS)
MCR716	TRSYS	获取价格	Silicon Controlled Rectifier
MCR716	CENTRAL	获取价格	SURFACE MOUNT SILICON CONTROLLED RECTIFIER 4 AMP, 400 THRU 600 VOLTS
MCR716_05	ONSEMI	获取价格	Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR716LEADFREE	CENTRAL	获取价格	Silicon Controlled Rectifier, 4A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, PLASITC, DP
MCR716T4	ONSEMI	获取价格	Sensitive Gate Silicon Controlled Rectifiers(SCRs 4.0 AMPERES RMS 400 − 600 VOLTS)
MCR716T4G	ONSEMI	获取价格	Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors

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