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MCR708AT4

更新时间： 2024-11-02 20:33:15
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA /
页数 文件大小 规格书
5页 68K
描述
4A, 600V, SCR, DPAK-3

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MCR708AT4 技术参数

生命周期：Transferred零件包装代码：TO-252
包装说明：SMALL OUTLINE, R-PSSO-G2针数：3
Reach Compliance Code：unknownHTS代码：8541.30.00.80
风险等级：5.08Is Samacsys：N
其他特性：SENSITIVE GATE外壳连接：ANODE
配置：SINGLE关态电压最小值的临界上升速率：10 V/us
最大直流栅极触发电流：0.075 mA最大直流栅极触发电压：1 V
最大维持电流：10 mAJESD-30 代码：R-PSSO-G2
JESD-609代码：e0最大漏电流：0.2 mA
通态非重复峰值电流：25 A元件数量：1
端子数量：2最大通态电压：2.2 V
最大通态电流：2600 A最高工作温度：110 °C
最低工作温度：-40 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
认证状态：Not Qualified最大均方根通态电流：4 A
断态重复峰值电压：600 V重复峰值反向电压：600 V
子类别：Silicon Controlled Rectifiers表面贴装：YES
端子面层：Tin/Lead (Sn/Pb)端子形式：GULL WING
端子位置：SINGLE触发设备类型：SCR
Base Number Matches：1

MCR708AT4 数据手册

 浏览型号MCR708AT4的Datasheet PDF文件第2页浏览型号MCR708AT4的Datasheet PDF文件第3页浏览型号MCR708AT4的Datasheet PDF文件第4页浏览型号MCR708AT4的Datasheet PDF文件第5页 
Preferred Device  
Reverse Blocking Thyristors  
PNPN devices designed for high volume, low cost consumer  
applications such as temperature, light and speed control; process and  
remote control; and warning systems where reliability of operation is  
critical.  
http://onsemi.com  
• Small Size  
SCRs  
• Passivated Die Surface for Reliability and Uniformity  
• Low Level Triggering and Holding Characteristics  
• Recommend Electrical Replacement for C106  
• Surface Mount Package — Case 369A  
4.0 AMPERES RMS  
100 thru 600 VOLTS  
G
• Device Marking: Device Type, e.g., for MCR703A: CR703A,  
A
K
Date Code  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
4
Rating  
Symbol  
Value  
Unit  
(1)  
Peak Repetitive Off–State Voltage  
V
V
Volts  
DRM,  
RRM  
1
2
(T = –40 to +110°C, Sine Wave,  
50 to 60 Hz, Gate Open) MCR703A  
C
3
100  
200  
400  
600  
MCR704A  
MCR706A  
MCR708A  
D–PAK  
CASE 369A  
STYLE 5  
Peak Non-Repetitive Off–State Voltage  
(Sine Wave, 50 to 60 Hz, Gate Open,  
V
RSM  
Volts  
T
= –40 to +110°C)  
MCR703A  
MCR704A  
MCR706A  
MCR708A  
150  
250  
450  
650  
C
PIN ASSIGNMENT  
Gate  
1
2
3
4
Anode  
On–State RMS Current  
(180° Conduction Angles, T = 90°C)  
I
4.0  
Amps  
Amps  
T(RMS)  
Cathode  
C
Anode  
Average On–State Current  
(180° Conduction Angles)  
I
T(AV)  
T
T
= –40 to +90°C  
= +100°C  
2.6  
1.6  
C
C
ORDERING INFORMATION  
Non-Repetitive Surge Current  
(1/2 Sine Wave, 60 Hz, T = 110°C)  
(1/2 Sine Wave, 1.5 ms, T = 110°C)  
I
Amps  
TSM  
25  
35  
Device  
Package  
Shipping  
J
J
MCR703AT4  
DPAK 369A  
16mm Tape  
and Reel  
2
I t  
2
A s  
Circuit Fusing (t = 8.3 ms)  
Forward Peak Gate Power  
2.6  
0.5  
P
Watt  
Watt  
Amp  
°C  
(2.5K/Reel)  
GM  
(Pulse Width ≤ 10 s, T = 90°C)  
C
MCR704AT4  
MCR706AT4  
MCR708AT4  
DPAK 369A  
DPAK 369A  
DPAK 369A  
16mm Tape  
and Reel  
(2.5K/Reel)  
Forward Average Gate Power  
(t = 8.3 ms, T = 90°C)  
P
0.1  
0.2  
G(AV)  
C
Forward Peak Gate Current  
(Pulse Width ≤ 10 s, T = 90°C)  
I
GM  
C
16mm Tape  
and Reel  
(2.5K/Reel)  
Operating Junction Temperature Range  
T
J
–40 to  
+110  
Storage Temperature Range  
T
–40 to  
+150  
°C  
stg  
16mm Tape  
and Reel  
(1) V  
DRM  
and V for all types can be applied on a continuous basis. Ratings  
RRM  
(2.5K/Reel)  
apply for zero or negative gate voltage; however, positive gate voltage shall  
not be applied concurrent with negative potential on the anode. Blocking  
voltages shall not be tested with a constant current source such that the  
voltage ratings of the devices are exceeded.  
Preferred devices are recommended choices for future use  
and best overall value.  
Semiconductor Components Industries, LLC, 2000  
597  
Publication Order Number:  
May, 2000 – Rev. 4  
MCR703A/D  
12345

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