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MCR708A

更新时间： 2024-09-08 22:46:19
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 触发装置可控硅整流器
页数 文件大小 规格书
4页 111K
描述
Silicon Controlled Rectifiers

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中文翻译

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MCR708A 技术参数

生命周期：Transferred包装说明：SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code：unknownHTS代码：8541.30.00.80
风险等级：5.06Is Samacsys：N
外壳连接：ANODE配置：SINGLE
关态电压最小值的临界上升速率：10 V/us最大直流栅极触发电流：0.075 mA
最大直流栅极触发电压：1 V最大维持电流：5 mA
JESD-30 代码：R-PSSO-G2JESD-609代码：e0
最大漏电流：0.2 mA通态非重复峰值电流：25 A
元件数量：1端子数量：2
最大通态电压：2.2 V最大通态电流：2600 A
最高工作温度：110 °C最低工作温度：-40 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE认证状态：Not Qualified
最大均方根通态电流：4 A重复峰值关态漏电流最大值：10 µA
断态重复峰值电压：600 V重复峰值反向电压：600 V
子类别：Silicon Controlled Rectifiers表面贴装：YES
端子面层：Tin/Lead (Sn/Pb)端子形式：GULL WING
端子位置：SINGLE触发设备类型：SCR
Base Number Matches：1

MCR708A 数据手册

 浏览型号MCR708A的Datasheet PDF文件第2页浏览型号MCR708A的Datasheet PDF文件第3页浏览型号MCR708A的Datasheet PDF文件第4页 
Order this document  
by MCR703A/D  
SEMICONDUCTOR TECHNICAL DATA  
Reverse Blocking Triode Thyristors  
. . . PNPN devices designed for high volume, low cost consumer applications such as  
temperature, light and speed control; process and remote control; and warning  
systems where reliability of operation is critical.  
*Motorola preferred devices  
•
•
•
•
•
Small Size  
SCRs  
4.0 AMPERES RMS  
100 thru 600 VOLTS  
Passivated Die Surface for Reliability and Uniformity  
Low Level Triggering and Holding Characteristics  
Recommend Electrical Replacement for C106  
Available in Two Package Styles:  
Surface Mount Leadforms — Case 369A  
Miniature Plastic Package — Straight Leads — Case 369  
G
ORDERING INFORMATION  
A
•
To Obtain “DPAK” in Surface Mount Leadform (Case 369A):  
Shipped in Sleeves — No Suffix, i.e., MCR706A  
Shipped in 16 mm Tape and Reel — Add “RL” Suffix to Device Number, i.e.,  
MCR706ARL  
K
•
To Obtain “DPAK” in Straight Lead Version:  
Shipped in Sleeves — Add ‘1’ Suffix to Device Number, i.e., MCR706A1  
MAXIMUM RATINGS (T = 25°C unless otherwise noted.)  
J
A
Characteristic  
Symbol  
Value  
Unit  
G
Peak Repetitive Forward and Reverse Blocking Voltage  
(1)  
V
DRM  
Volts  
A
K
or  
RRM  
(1/2 Sine Wave)  
V
CASE 369A  
STYLE 5  
(R  
= 1000 Ohms,  
MCR703A1, MCR703A  
MCR704A1, MCR704A  
MCR706A1, MCR706A  
MCR708A1, MCR708A  
100  
200  
400  
600  
GK  
= –40 to +110°C)  
T
C
A
Peak Non-repetitive Reverse Blocking Voltage  
(1/2 Sine Wave, R = 1000 Ohms,  
V
RSM  
Volts  
GK  
= –40 to +110°C)  
G
A
T
C
MCR703A1, MCR703A  
150  
250  
450  
650  
K
MCR704A1, MCR704A  
MCR706A1, MCR706A  
MCR708A1, MCR708A  
CASE 369  
STYLE 5  
Average On-State Current  
(T = –40 to +90°C)  
(T = +100°C)  
C
I
2.6  
1.6  
Amps  
Amps  
C
T(AV)  
0.190  
4.826  
Surge On-State Current (1/2 Sine Wave, 60 Hz, T  
=
=
I
25  
35  
C
TSM  
+90°C)  
(1/2 Sine Wave, 1.5 ms T  
+90°C)  
C
2
2
Circuit Fusing (t = 8.3 ms)  
Peak Gate Power (Pulse Width = 10 µs, T = 90°C)  
I t  
2.6  
A s  
P
0.5  
Watt  
Watt  
Amp  
Volts  
°C  
C
GM  
Average Gate Power (t = 8.3 ms, T = 90°C)  
P
0.1  
0.2  
C
G(AV)  
Peak Forward Gate Current  
I
GM  
Peak Reverse Gate Voltage  
V
6
RGM  
Operating Junction Temperature Range  
Storage Temperature Range  
T
J
–40 to +110  
–40 to +150  
T
°C  
stg  
1. V  
and V for all types can be applied on a continuous basis. Ratings apply for zero or  
RRM  
DRM  
0.243  
6.172  
inches  
mm  
negative gate voltage; however, positive gate voltage shall not be applied concurrent with  
negative potential on the anode. Blocking voltages shall not be tested with a constant current  
source such that the voltage ratings of the devices are exceeded.  
Figure 1. Minimum Pad  
Sizes for  
Preferred devices are Motorola recommended choices for future use and best overall value.  
Surface Mounting  
REV 1  
Motorola, Inc. 1995  
1234

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