生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
Reach Compliance Code: | unknown | HTS代码: | 8541.30.00.80 |
风险等级: | 5.06 | Is Samacsys: | N |
外壳连接: | ANODE | 配置: | SINGLE |
关态电压最小值的临界上升速率: | 10 V/us | 最大直流栅极触发电流: | 0.075 mA |
最大直流栅极触发电压: | 1 V | 最大维持电流: | 5 mA |
JESD-30 代码: | R-PSSO-G2 | JESD-609代码: | e0 |
最大漏电流: | 0.2 mA | 通态非重复峰值电流: | 25 A |
元件数量: | 1 | 端子数量: | 2 |
最大通态电压: | 2.2 V | 最大通态电流: | 2600 A |
最高工作温度: | 110 °C | 最低工作温度: | -40 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 认证状态: | Not Qualified |
最大均方根通态电流: | 4 A | 重复峰值关态漏电流最大值: | 10 µA |
断态重复峰值电压: | 600 V | 重复峰值反向电压: | 600 V |
子类别: | Silicon Controlled Rectifiers | 表面贴装: | YES |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | GULL WING |
端子位置: | SINGLE | 触发设备类型: | SCR |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MCR708A1 | MOTOROLA |
获取价格 |
4A, 600V, SCR |
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MCR708A1 | ONSEMI |
获取价格 |
Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors |
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MCR708A1G | ONSEMI |
获取价格 |
Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors |
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MCR708AG | ONSEMI |
获取价格 |
Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors |
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MCR708ALEADFREE | CENTRAL |
获取价格 |
Silicon Controlled Rectifier, 4A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, PLASTIC, DP |
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MCR708APBFREE | CENTRAL |
获取价格 |
Silicon Controlled Rectifier, |
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MCR708ARL | ONSEMI |
获取价格 |
Silicon Controlled Rectifier, 4A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element |
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MCR708AT4 | ONSEMI |
获取价格 |
Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors |
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MCR708AT4 | MOTOROLA |
获取价格 |
4A, 600V, SCR, DPAK-3 |
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MCR708AT4G | ONSEMI |
获取价格 |
Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors |
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