Datasheet > 触发装置 > 可控硅整流器> MCR706ATIN/LEAD#N/A

MCR706ATIN/LEAD#N/A

更新时间： 2024-11-02 13:11:23

品牌	Logo	应用领域
CENTRAL		触发装置可控硅整流器
页数	文件大小	规格书
2页	470K
描述
Silicon Controlled Rectifier,

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中文翻译

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技术参数
数据手册

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MCR706ATIN/LEAD#N/A 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.64
JESD-609代码：	e0	峰值回流温度（摄氏度）：	NOT SPECIFIED
端子面层：	TIN LEAD	处于峰值回流温度下的最长时间：	NOT SPECIFIED
触发设备类型：	SCR	Base Number Matches：	1

MCR706ATIN/LEAD#N/A 数据手册

浏览型号MCR706ATIN/LEAD#N/A的Datasheet PDF文件第2页

MCR703A MCR704A

MCR706A MCR708A

www.centralsemi.com

SURFACE MOUNT

SILICON CONTROLLED RECTIFIER

4 AMP, 100 THRU 600 VOLTS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR MCR703A,

MCR704A, MCR706A, and MCR708A are epoxy

molded Silicon Controlled Rectifiers designed for

sensing circuit applications and control systems.

MARKING: FULL PART NUMBER

DPAK THYRISTOR CASE

MAXIMUM RATINGS: (T =25°C unless otherwise noted)

SYMBOL

MCR703A MCR704A

100 200

MCR706A MCR708A UNITS

Peak Repetitive Off-State Voltage

400

600

DRM, RRM

RMS On-State Current (T =85°C)

4.0

T(RMS)

Peak non-Repetitive Surge Current

(1/2 cycle Sine wave, 50Hz/60Hz)

1.1

0.5

0.1

0.2

A²s

TSM

I²t

I²t Value for Fusing, t=10ms

Peak Gate Power, tp=1.0μs

Average Gate Power Dissipation

Peak Gate Current, tp=1.0μs

Critical Rate of Rise of On-State Current

Storage Temperature

G(AV)

di/dt

A/μs

°C

-40 to +150

-40 to +125

stg

Junction Temperature

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Rated V V R =1.0KΩ

DRM, RRM, GK

μA

DRM, RRM

Rated V

=1.0KΩ, T =125°C

200

DRM, RRM

DRM, RRM, GK

V =12V, R =10Ω

I =50mA, R =1.0KΩ

0.25

0.55

1.6

2.0

0.8

1.8

V =12V, R =10Ω

=8.0A, tp=380μs

dv/dt

V = / V

=1.0KΩ, T =125°C

V/μs

DRM, GK

R1 (1-March 2010)

中文翻译

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