SEMICONDUCTOR
KTC3535T
EPITAXIAL PLANAR NPN TRANSISTOR
TECHNICAL DATA
RELAY DRIVERS, LAMP DRIVERS,
MOTOR DRIVERS AND STROBES APPLICATION.
E
B
K
FEATURES
DIM MILLIMETERS
ᴌAdoption of MBIT Processes.
ᴌHigh Current Capacitance.
_
A
B
2.9+0.2
1.6+0.2/-0.1
_
C
D
0.70+0.05
2
1
3
ᴌLow Collector-to-Emitter Saturation Voltage.
ᴌHigh Speed Switching.
_
0.4+0.1
E
F
2.8+0.2/-0.3
1.9+0.2
_
G
0.95
ᴌUltrasmall-Sized Package permitting applied sets to be
made small and slim.
_
H
I
J
K
L
0.16+0.05
0.00-0.10
0.25+0.25/-0.15
0.60
ᴌHigh Allowable Power Dissipation.
ᴌComplementary to KTA1535T
0.55
I
H
J
J
MAXIMUM RATING (Ta=25ᴱ)
1. EMITTER
2. BASE
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
SYMBOL
VCBO
VCEO
VEBO
IC
RATING
UNIT
V
20
3. COLLECTOR
20
V
5
V
DC
3
5
Collector Current
A
TSM
ICP
Pulse
IB
Base Current
600
mA
W
PC *
Tj
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
0.9
Marking
150
Lot No.
ᴱ
Tstg
-55ᴕ150
ᴱ
Type Name
* Package mounted on a ceramic board (600Ὅᴧ0.8Ὂ)
H D
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
Collector Cut-off Current
SYMBOL
ICBO
TEST CONDITION
MIN.
TYP. MAX. UNIT
VCB=12V, IE=0
-
-
-
0.1
0.1
-
ỌA
ỌA
V
IEBO
VEB=4V, IC=0
Emitter Cut-off Current
-
-
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCE(sat)
VBE(sat)
hFE
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
IC=10ỌA, IE=0
20
20
5
IC=1mA, IB=0
-
-
V
IE=10ỌA, IC=0
-
-
V
IC=1.5A, IB=30mA
IC=1.5A, IB=30mA
VCE=2V, IC=500mA
VCE=2V, IC=500mA
VCB=10V, f=1MHz
-
120
0.85
-
150
1.2
560
-
mV
V
-
200
-
fT
Transition Frequency
180
30
MHz
pF
Cob
Collector Output Capacitance
-
-
I
B2
PW=20µs
B1
ton
tstg
tf
Turn-On Time
-
-
-
30
210
11
-
-
-
I
<
DC 1%
=
OUTPUT
INPUT
1kΩ
R
L
V
R
Swiitching
Storage Time
Time
50Ω
nS
220µF
470µF
V
=-5V
V
=5V
Fall Time
CC
BE
20I =-20I =I =1.5A
B1
C
B2
2001. 6. 28
Revision No : 0
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