Datasheet > KTC3573

KTC3573

更新时间： 2024-11-21 17:15:23

品牌	Logo	应用领域
KEC		/
页数	文件大小	规格书
3页	380K
描述
SOT-89

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中文翻译

获取价格

数据手册

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KTC3573 数据手册

SEMICONDUCTOR

KTC3573

EPITAXIAL PLANAR NPN TRANSISTOR

TECHNICAL DATA

LED Drive Application

FEATURE

Low Collector-Emitter Saturation Voltage .

High Current Gain.

MAXIMUM RATING (Ta=25

CHARACTERISTIC

)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATING

UNIT

DIM MILLIMETERS

4.70 MAX

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

120

2.50 0.20

1.70 MAX

100

0.45+0.15/-0.10

4.25 MAX

1.50 0.10

0.40 TYP

1.75 MAX

Collector Current

Pulse

0.75 MIN

I_CP

0.5+0.10/-0.05

1.40 0.10

1. BASE

I_B

Base Current

500

0.19 0.10

2. COLLECTOR(HEAT SINK)

3. EMITTER

0.47 + 0.10

P_C

Collector Power Dissipation

P_C*

T_j

Junction Temperature

150

-55 150

SOT-89

T_stg

Storage Temperature Range

Note : * Package Mounted on Ceramic substrate (250mm²0.8t)

MARKING

Lot No.

Type Name

ELECTRICAL CHARACTERISTICS (Ta=25

)

CHARACTERISTIC

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage **

Emitter-Base Breakdown Voltage

Collector Cut-Off Current

SYMBOL

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

TEST CONDITION

MIN.

TYP.

MAX. UNIT

I_C=100 A

I_C=1mA

120

100

I_E=100 A

V_CB=120V

I_EBO

V_EB=5V, I_C=0A

Emitter Cut-Off Current

I_CES

V_CES=100V, V_BE=0V

I_C=100mA, I_B=10mA

I_C=500mA, I_B=50mA

I_C=200mA, I_B=1mA

V_CE=10V, I_C=1mA

V_CE=10V, I_C=250mA

V_CE=10V, I_C=500mA

V_CE=1.0V, I_C=200mA

Collector-Emitter Cut-Off Current

V_CE(sat)(1)

V_CE(sat)(2)

V_CE(sat)(3)

h_FE(1)

0.06

0.18

1.0

Collector-Emitter Saturation Voltage **

0.7

150

200

100

150

h_FE(2)

500

DC Current Gain **

h_FE(3)

h_FE(4)

** Pulse Width = 300 S, Duty Cycle 2%.

2020. 10. 05

Revision No : 1

1/3

12 3

中文翻译

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