Datasheet > KTC3770

KTC3770

更新时间： 2024-11-17 22:13:39

品牌	Logo	应用领域
KEC		晶体放大器晶体管局域网
页数	文件大小	规格书
5页	441K
描述
EPITAXIAL PLANAR NPN TRANSISTOR (VHF/UHF WIDE BAND AMPLIFIER)

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中文翻译

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数据手册

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KTC3770 数据手册

SEMICONDUCTOR

KTC3770S

EPITAXIAL PLANAR NPN TRANSISTOR

TECHNICAL DATA

VHF/UHF WIDE BAND AMPLIFIER APPLICATION.

FEATURES

DIM MILLIMETERS

Low Noise Figure, High Gain.

NF=1.1dB, |S_21e|²=11dB (f=1GHz).

2.93 0.20

1.30+0.20/-0.15

1.30 MAX

0.45+0.15/-0.05

2.40+0.30/-0.20

1.90

0.95

0.13+0.10/-0.05

0.00 ~ 0.10

0.55

MAXIMUM RATING (Ta=25

CHARACTERISTIC

)

0.20 MIN

1.00+0.20/-0.10

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATING

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

1. EMITTER

2. BASE

Collector Current

100

3. COLLECTOR

P_C

Collector Power Dissipation

Junction Temperature

150

T_j

150

T_stg

Storage Temperature Range

SOT-23

-55 150

Marking

Rank

Lot No.

Type Name

ELECTRICAL CHARACTERISTICS (Ta=25

)

CHARACTERISTIC

Collector Cut-off Current

SYMBOL

I_CBO

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

V_CB=10V, I_E=0

V_EB=1V, I_C=0

I_EBO

Emitter Cut-off Current

DC Current Gain

h_FE(Note1)

C_ob

V_CE=10V, I_C=20mA

250

1.0

1.15

Collector Output Capacitance

Reverse Transfer Capacitance

Transition Frequency

Insertion Gain

V_CB=10V, I_E=0, f=1MHz (Note2)

C_re

0.65

f_T

V_CE=10V, I_C=20mA

GHz

|S_21e

V_CE=10V, I_C=20mA, f=1GHz

V_CE=10V, I_C=7mA, f=1GHz

7.5

11.5

1.1

Noise Figure

Note 1 : h_FEClassification

A:50~100, B:80~160, C:125~250.

Note 2 : C_reis measured by 3 terminal method with capacitance bridge.

2003. 2. 12

Revision No : 1

1/5

12 3 4 5

中文翻译

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