Datasheet > KTC3875

KTC3875

更新时间： 2024-11-19 14:55:59

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	727K
描述
SOT-23

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数据手册

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KTC3875 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encapsulate Transistors

SOT-23

KTC3875

TRANSISTOR (NPN)

FEATURES

· High hFE

1. BASE

· Low noise

2. EMITTER

3. COLLECTOR

· Complementary to KTA1504

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

150

833

℃/W

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

P_C

R_ΘJA

Operation Junction and

Storage Temperature Range

T_J,T_stg

-55～+150

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

I_C=100μA,I_E=0

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBO

V_(BR)CEOI_C= 1mA, I_B=0

V_(BR)EBO

I_CBO

I_E= 100μA, I_C=0

V_CB= 60V, I_E=0

0.1

700

0.25

μA

Emitter cut-off current

I_EBO

V_EB= 5V, I_C=0

DC current gain

h_FE

V_CE= 6V, I_C= 2mA

I_C=100mA, I_B= 10mA

Collector-emitter saturation voltage

base-emitter saturation voltage

Transition frequency

V_CE(sat)

V_BE(sat)

f_T

0.1

_CE=10V, I_C= 1mA

MHz

Collector output capacitance

V_CB=10V,I_E=0,f=1MH_Z

2.0

1.0

3.5

C_ob

Noise figure

V_CE=6V,I_C=0.1mA,Rg=10kΩ,f=1KH_Z

CLASSIFICATION OF h_FE

350-700

ALL

Rank

70-140

ALO

120-240

ALY

200-400

ALG

Range

Marking

www.jscj-elec.com

Rev. - 2.0

12 3 4

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