Datasheet > KTC3875

KTC3875

更新时间： 2024-01-18 09:35:59

品牌	Logo	应用领域
WEITRON		晶体晶体管
页数	文件大小	规格书
5页	400K
描述
Plastic-Encapsulate Transistors NPN Silicon

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中文翻译

获取价格

技术参数
数据手册

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KTC3875 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.62	湿度敏感等级：	1
Base Number Matches：	1

KTC3875 数据手册

KTC3875

COLLECTOR

Plastic-Encapsulate Transistors

NPN Silicon

BASE

SOT-23

EMITTER

(Ta=25 C)

MAXIMUM RATINGS

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Symbol

Value

Unit

Vdc

CEO

CBO

EBO

5.0

Vdc

Collector Current -Continuous

mAdc

150

THERMAL CHARACTERISTICS

Characteristics

Total Device Dissipation FR-5 Board ⁽¹⁾

T_A=25 C

Symbol

Value

Unit

150

mW/ C

C/W

Derate above 25 C

Thermal Resistance, Junction Ambient

1.2

833

θJA

-55 to +150

Junction and Storage, Temperature

Tstg

Device Marking

KTC3875=AL

ELECTRICAL CHARACTERISTICS

Max

Characteristics

Symbol

Min

Unit

Collector-Emitter Breakdown Voltage (I = -1 mAdc, I =0)

Vdc

(BR)CEO

Vdc

Collector-Base Breakdown Voltage (I = -100 uAdc, I =0)

(BR)CBO

5.0

Emitter-Base Breakdown Voltage (I = 100 uAdc, I =0)

(BR)EBO

uAdc

0.1

Collector Cutoff Current (V = 60Vdc , I =0)

CBO

Emitter Cutoff Current (V = 5.0 V c , I =0)

EBO

1. FR-5=1.0 0.75 0.062 in

WEITRON

http://www.weitron.com.tw

12 3 4 5

中文翻译

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