Datasheet > KTC3790UL

KTC3790UL

更新时间： 2024-11-18 03:48:55

品牌	Logo	应用领域
KEC		晶体晶体管局域网
页数	文件大小	规格书
5页	74K
描述
EPITAXIAL PLANAR NPN TRANSISTOR

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中文翻译

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数据手册

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KTC3790UL 数据手册

SEMICONDUCTOR

KTC3790U

EPITAXIAL PLANAR NPN TRANSISTOR

TECHNICAL DATA

VHF/UHF WIDE BAND AMPLIFIER APPLICATION.

FEATURES

DIM MILLIMETERS

Low Noise Figure, High Gain.

NF=1.2dB, |S_21e|²=13dB (f=1GHz).

2.00+0.20

1.25+0.15

0.90+0.10

0.3+0.10/-0.05

2.10 0.20

0.65

0.15+0.1/-0.06

1.30

MAXIMUM RATING (Ta=25

CHARACTERISTIC

)

0.00-0.10

0.70

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATING

UNIT

0.42+0.10

0.10 MIN

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

1. EMITTER

2. BASE

1.5

Collector Current

3. COLLECTOR

P_C

Collector Power Dissipation

Junction Temperature

100

T_j

150

T_stg

USM

Storage Temperature Range

-55 150

Marking

Type Name

Rank

CHARACTERISTIC

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

SYMBOL

I_CBO

I_EBO

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

V_CB=10V, I_E=0

V_EB=1V, I_C=0

h_FE(Note1)

C_re

V_CE=8V, I_C=20mA

250

0.9

V_CB=10V, I_E=0, f=1MHz (Note2)

V_CE=8V, I_C=20mA

Reverse Transfer Capacitance

Transition Frequency

Insertion Gain

0.35

GHz

f_T

|S_21e

V_CE=8V, I_C=20mA, f=1GHz

V_CE=8V, I_C=7mA, f=1GHz

1.2

Noise Figure

2.5

Note 1 : h_FEClassification

L:50~100, M:80~160, N:125~250.

Note 2 : C_reis measured by 3 terminal method with capacitance bridge.

2005. 11. 16

Revision No : 1

1/5

12 3 4 5

中文翻译

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