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KTC3790UN PDF预览

KTC3790UN

更新时间: 2024-11-18 03:48:55
品牌 Logo 应用领域
KEC 晶体晶体管局域网
页数 文件大小 规格书
5页 74K
描述
EPITAXIAL PLANAR NPN TRANSISTOR

KTC3790UN 数据手册

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SEMICONDUCTOR  
KTC3790U  
EPITAXIAL PLANAR NPN TRANSISTOR  
TECHNICAL DATA  
VHF/UHF WIDE BAND AMPLIFIER APPLICATION.  
E
FEATURES  
M
B
M
DIM MILLIMETERS  
_
Low Noise Figure, High Gain.  
NF=1.2dB, |S21e|2=13dB (f=1GHz).  
A
B
C
D
E
2.00+0.20  
D
2
1
_
1.25+0.15  
_
0.90+0.10  
3
0.3+0.10/-0.05  
_
+
2.10 0.20  
G
H
J
0.65  
0.15+0.1/-0.06  
1.30  
MAXIMUM RATING (Ta=25  
CHARACTERISTIC  
)
K
L
0.00-0.10  
0.70  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
RATING  
20  
UNIT  
V
H
_
0.42+0.10  
M
N
0.10 MIN  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
N
N
K
10  
V
1. EMITTER  
2. BASE  
1.5  
V
Collector Current  
65  
mA  
mW  
3. COLLECTOR  
PC  
Collector Power Dissipation  
Junction Temperature  
100  
Tj  
150  
Tstg  
USM  
Storage Temperature Range  
-55 150  
Marking  
Type Name  
h
Rank  
FE  
R
CHARACTERISTIC  
Collector Cut-off Current  
Emitter Cut-off Current  
DC Current Gain  
SYMBOL  
ICBO  
IEBO  
TEST CONDITION  
MIN.  
TYP.  
MAX.  
UNIT  
A
VCB=10V, IE=0  
-
-
-
-
1
1
VEB=1V, IC=0  
A
hFE (Note1)  
Cre  
VCE=8V, IC=20mA  
50  
-
-
250  
0.9  
-
VCB=10V, IE=0, f=1MHz (Note2)  
VCE=8V, IC=20mA  
Reverse Transfer Capacitance  
Transition Frequency  
Insertion Gain  
0.35  
9
pF  
GHz  
dB  
fT  
-
2
|S21e  
|
VCE=8V, IC=20mA, f=1GHz  
VCE=8V, IC=7mA, f=1GHz  
11  
-
13  
1.2  
-
Noise Figure  
NF  
2.5  
dB  
Note 1 : hFE Classification  
L:50~100, M:80~160, N:125~250.  
Note 2 : Cre is measured by 3 terminal method with capacitance bridge.  
2005. 11. 16  
Revision No : 1  
1/5  

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