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TM
KTC3875-Y
KTC3875-GR
Micro Commercial Components
Features
•
•
·
High hFE and Low Noise
Epitaxial Planar
NPN Transistors
Complementary to KTA1504
Lead Free Finish/Rohs Compliant ("P"Suffix designates
RoHS Compliant. See ordering information)
Halogen free available upon request by adding suffix "-HF"
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
•
·
·
SOT-23
A
D
Maximum Ratings
C
Symbol
VCEO
VCBO
VEBO
IC
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Rating
50
Unit
V
B
C
60
V
5.0
V
mA
mW
℃
150
E
B
PC
Collector power dissipation
Junction Temperature
150
F
E
TJ
-55 to +150
TSTG
Storage Temperature
-55 to +150
℃
H
G
J
K
Electrical Characteristics @ 25OC Unless Otherwise Specified
DIMENSIONS
MM
Symbol
Parameter
Min
Typ
Max
Units
INCHES
MIN
OFF CHARACTERISTICS
DIM
A
B
C
D
E
MAX
.120
.098
.055
.041
.081
.024
.0039
.044
.007
.020
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
MAX
NOTE
ICBO
Collector-Base Cutoff Current
---
---
---
---
0.1
0.1
uAdc
uAdc
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
(VCB=60Vdc,IE=0)
Emitter-Base Cutoff Current
(VEB=5.0Vdc, IC=0)
IEBO
F
ON CHARACTERISTICS
G
H
J
hFE
DC Current gain(1)
(IC=2mAdc, VCE=6.0Vdc)
120
---
0.1
400
0.25
---
Vdc
.085
.37
K
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=100mAdc, IB=10mAdc)
---
Suggested Solder
Pad Layout
VBE(sat) Base-Emitter Saturation Voltage
(IC=100mAdc,IB=10mAdc)
fT
---
---
1.0
---
Transistor Frequency
80
---
MHz
.031
.800
(VCE=10Vdc, IC=1mAdc)
Cob
Collector Output Capacitance
(VCB=10Vdc, IE=0, f=1.0MHz)
Noise Figure
---
---
2.0
1.0
3.5
10
pF
.035
.900
NF
dB
.079
2.000
(VCE=6V,IC=0.1mA,Rg=10kohm¸,f=1KHz)
inches
mm
(1) hFEClassification Y: 120~240(Marking: ALY),
GR: 200~400(Marking: ALG)
.037
.950
.037
.950
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Revision: A
2014/02/17