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KTC3875S PDF预览

KTC3875S

更新时间: 2024-11-17 21:55:31
品牌 Logo 应用领域
KEC 晶体晶体管开关光电二极管
页数 文件大小 规格书
3页 96K
描述
GENERAL PURPOSE APPLICATION SWITCHING APPLICATION.

KTC3875S 技术参数

是否Rohs认证:符合生命周期:Active
零件包装代码:SOT-23包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.59Is Samacsys:N
其他特性:LOW NOISE最大集电极电流 (IC):0.15 A
集电极-发射极最大电压:50 V配置:SINGLE
最小直流电流增益 (hFE):70JESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):80 MHzBase Number Matches:1

KTC3875S 数据手册

 浏览型号KTC3875S的Datasheet PDF文件第2页浏览型号KTC3875S的Datasheet PDF文件第3页 
SEMICONDUCTOR  
KTC3875S  
EPITAXIAL PLANAR NPN TRANSISTOR  
TECHNICAL DATA  
GENERAL PURPOSE APPLICATION.  
SWITCHING APPLICATION.  
E
L
B
L
FEATURES  
DIM MILLIMETERS  
Excellent hFE Linearity  
_
+
2.93 0.20  
A
B
C
D
E
G
H
J
1.30+0.20/-0.15  
1.30 MAX  
0.45+0.15/-0.05  
2.40+0.30/-0.20  
1.90  
: hFE(0.1mA)/hFE(2mA)=0.95(Typ.).  
High hFE : hFE=70700.  
2
3
Low Noise : NF=1dB(Typ.), 10dB(Max.).  
Complementary to KTA1504S.  
1
0.95  
0.13+0.10/-0.05  
0.00 ~ 0.10  
0.55  
K
L
P
P
M
N
P
0.20 MIN  
1.00+0.20/-0.10  
7
MAXIMUM RATING (Ta=25)  
M
CHARACTERISTIC  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
SYMBOL  
RATING  
UNIT  
V
1. EMITTER  
2. BASE  
VCBO  
VCEO  
VEBO  
IC  
60  
50  
V
3. COLLECTOR  
5
V
150  
mA  
mA  
mW  
SOT-23  
IB  
Base Current  
30  
PC  
Collector Power Dissipation  
Junction Temperature  
Storage Temperature Range  
150  
Tj  
150  
Tstg  
-55150  
Marking  
h
Rank  
FE  
Lot No.  
Type Name  
AL  
ELECTRICAL CHARACTERISTICS (Ta=25)  
CHARACTERISTIC  
Collector Cut-off Current  
SYMBOL  
ICBO  
TEST CONDITION  
MIN.  
TYP.  
MAX.  
UNIT  
A  
VCB=60V, IE=0  
-
-
-
-
0.1  
0.1  
700  
0.25  
-
IEBO  
VEB=5V, IC=0  
Emitter Cut-off Current  
DC Current Gain  
A  
hFE(Note)  
VCE(sat)  
fT  
VCE=6V, IC=2mA  
IC=100mA, IB=10mA  
VCE=10V, IC=1mA  
VCB=10V, IE=0, f=1MHz  
VCE=6V, IC=0.1mA  
f=1kHz, Rg=10kή  
70  
-
-
Collector-Emitter Saturation Voltage  
Transition Frequency  
0.1  
-
V
MHz  
pF  
80  
-
Cob  
Collector Output Capacitance  
2.0  
3.5  
Noise Figure  
NF  
-
1.0  
10  
dB  
Note : hFE Classification  
O:70140, Y:120240, GR(G):200400, BL(L):350700  
2001. 2. 24  
Revision No : 2  
1/3  

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