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KTC3875 PDF预览

KTC3875

更新时间: 2024-01-22 03:52:58
品牌 Logo 应用领域
SECOS 晶体晶体管
页数 文件大小 规格书
3页 594K
描述
0.15A , 60V NPN Plastic Encapsulated Transistor

KTC3875 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.62湿度敏感等级:1
Base Number Matches:1

KTC3875 数据手册

 浏览型号KTC3875的Datasheet PDF文件第2页浏览型号KTC3875的Datasheet PDF文件第3页 
KTC3875  
0.15A , 60V  
NPN Plastic Encapsulated Transistor  
Elektronische Bauelemente  
RoHS Compliant Product  
A suffix of “-C” specifies halogen & lead-free  
SOT-23  
FEATURES  
High hFE  
Low noise  
Complementary to KTA1504  
A
L
3
3
Top View  
C B  
1
1
2
2
CLASSIFICATION OF hFE  
K
F
E
Product-Rank  
KTC3875-O  
70~140  
ALO  
KTC3875-Y KTC3875-GR KTC3875-BL  
D
Range  
120~240  
ALY  
200~400  
ALG  
350~700  
ALL  
H
J
G
Marking Code  
Millimeter  
Millimeter  
REF.  
REF.  
Min.  
Max.  
3.04  
2.55  
1.40  
1.15  
2.04  
0.50  
Min.  
Max.  
A
B
C
D
E
F
2.80  
2.10  
1.20  
0.89  
1.78  
0.30  
G
H
J
K
L
0.09  
0.45  
0.08  
0.18  
0.60  
0.177  
PACKAGE INFORMATION  
0.6 REF.  
Package  
MPQ  
Leader Size  
7 inch  
0.89  
1.02  
SOT-23  
3K  
Collector  
3
1
Base  
2
Emitter  
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)  
Parameter  
Symbol  
Ratings  
Unit  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
VCBO  
VCEO  
VEBO  
IC  
60  
V
V
50  
5
150  
V
Collector Current - Continuous  
Collector Power Dissipation  
Junction, Storage Temperature  
mA  
mW  
°C  
PC  
150  
TJ, TSTG  
150, -55~150  
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)  
Parameter  
Symbol  
Min.  
Typ. Max.  
Unit  
Test Conditions  
Collector to Base Breakdown Voltage  
Collector to Emitter Breakdown Voltage  
Emitter to Base Breakdown Voltage  
Collector Cut-Off Current  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
60  
50  
5
-
-
-
V
V
IC=100µA, IE=0  
IC=1mA, IB=0  
-
-
-
V
IE=100µA, IC=0  
VCB=60V, IE=0  
-
-
0.1  
0.1  
700  
0.25  
1
µA  
µA  
Emitter Cut-Off Current  
IEBO  
-
-
-
VEB=5V, IC=0  
DC Current Gain  
hFE  
70  
-
VCE=6V, IC=2mA  
IC=100mA, IB=10mA  
IC=100mA, IB=10mA  
Collector to Emitter Saturation Voltage  
Base to Emitter Saturation Voltage  
Transition Frequency  
VCE(sat)  
VBE(sat)  
fT  
0.1  
-
V
V
-
80  
-
-
-
MHz VCE=10V, IC=1mA  
Collector output capacitance  
Cob  
2.0  
3.5  
pF  
V
V
CB=10V, I  
E
=0, f=1MH  
Z
CE=6V, I =0.1mA, Rg=10k,  
C
Noise figure  
NF  
-
1
10  
dB  
f=1KH  
Z
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
15-Jul-2011 Rev. A  
Page 1 of 3  

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