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KTC3876-GR-TP PDF预览

KTC3876-GR-TP

更新时间: 2024-01-05 18:15:56
品牌 Logo 应用领域
美微科 - MCC /
页数 文件大小 规格书
2页 773K
描述
Small Signal Bipolar Transistor,

KTC3876-GR-TP 技术参数

是否Rohs认证:符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.67
Is Samacsys:NBase Number Matches:1

KTC3876-GR-TP 数据手册

 浏览型号KTC3876-GR-TP的Datasheet PDF文件第2页 
M C C  
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TM  
KTC3876-Y  
KTC3876-GR  
Micro Commercial Components  
Features  
·
High hFE and Low Noise  
Epitaxial Planar  
NPN Transistors  
Complementary to KTA1505  
Lead Free Finish/Rohs Compliant ("P"Suffix designates  
RoHS Compliant. See ordering information)  
Halogen free available upon request by adding suffix "-HF"  
Epoxy meets UL 94 V-0 flammability rating  
Moisture Sensitivity Level 1  
·
·
SOT-23  
A
D
Maximum Ratings  
C
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Rating  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
Rating  
30  
35  
Unit  
V
B
C
V
5.0  
V
mA  
mW  
500  
E
B
PC  
Collector power dissipation  
Junction Temperature  
200  
F
E
TJ  
-55 to +150  
TSTG  
Storage Temperature  
-55 to +150  
H
G
J
K
Electrical Characteristics @ 25OC Unless Otherwise Specified  
DIMENSIONS  
MM  
Symbol  
Parameter  
Min  
Typ  
Max  
Units  
INCHES  
MIN  
OFF CHARACTERISTICS  
DIM  
A
B
C
D
E
MAX  
.120  
.098  
.055  
.041  
.081  
.024  
.0039  
.044  
.007  
.020  
MIN  
2.80  
2.10  
1.20  
.89  
1.78  
.45  
.013  
.89  
MAX  
NOTE  
ICBO  
Collector-Base Cutoff Current  
---  
---  
---  
---  
0.1  
0.1  
uAdc  
uAdc  
.110  
.083  
.047  
.035  
.070  
.018  
.0005  
.035  
.003  
.015  
3.04  
2.64  
1.40  
1.03  
2.05  
.60  
.100  
1.12  
.180  
.51  
(VCB=35Vdc,IE=0)  
Emitter-Base Cutoff Current  
(VEB=5.0Vdc, IC=0)  
IEBO  
F
G
H
J
ON CHARACTERISTICS  
hFE  
DC Current gain(1)  
.085  
.37  
K
(IC=100mAdc, VCE=1.0Vdc)  
120  
---  
400  
---  
VCE(sat)  
VBE  
fT  
Collector-Emitter Saturation Voltage  
(IC=100mAdc, IB=10mAdc)  
Base-Emitter Voltage  
---  
---  
0.25  
Vdc  
Suggested Solder  
Pad Layout  
---  
---  
---  
---  
300  
2.0  
1.0  
---  
Vdc  
MHz  
pF  
(VCE=1.0Vdc,IB=100mAdc)  
Transistor Frequency  
.031  
.800  
(VCE=6Vdc, IC=20mAdc)  
.035  
.900  
Cob  
Collector Output Capacitance  
3.5  
(VCB=6Vdc, IE=0, f=1.0MHz)  
.079  
2.000  
inches  
mm  
(1) hFEClassification Y: 120~240(Marking: WY),  
GR: 200~400(Marking: WG)  
.037  
.950  
.037  
.950  
www.mccsemi.com  
1 of 2  
Revision: A  
2015/01/09  

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