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KTC3790S PDF预览

KTC3790S

更新时间: 2024-01-04 19:09:35
品牌 Logo 应用领域
KEC 晶体放大器晶体管局域网
页数 文件大小 规格书
5页 494K
描述
EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION

KTC3790S 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.84其他特性:LOW NOISE
最大集电极电流 (IC):0.065 A基于收集器的最大容量:0.9 pF
集电极-发射极最大电压:10 V配置:SINGLE
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):9000 MHzBase Number Matches:1

KTC3790S 数据手册

 浏览型号KTC3790S的Datasheet PDF文件第2页浏览型号KTC3790S的Datasheet PDF文件第3页浏览型号KTC3790S的Datasheet PDF文件第4页浏览型号KTC3790S的Datasheet PDF文件第5页 
SEMICONDUCTOR  
KTC3790S  
EPITAXIAL PLANAR NPN TRANSISTOR  
TECHNICAL DATA  
VHF/UHF WIDE BAND AMPLIFIER APPLICATION.  
FEATURES  
E
Low Noise Figure, High Gain.  
NF=1.2dB, |S21e|2=13dB (f=1GHz).  
L
B
L
DIM MILLIMETERS  
_
+
A
B
C
D
E
2.93 0.20  
1.30+0.20/-0.15  
1.30 MAX  
0.40+0.15/-0.05  
2.40+0.30/-0.20  
1.90  
2
3
1
G
H
J
MAXIMUM RATING (Ta=25  
CHARACTERISTIC  
)
0.95  
0.13+0.10/-0.05  
0.00 ~ 0.10  
0.55  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
RATING  
20  
UNIT  
V
K
L
P
P
M
N
P
0.20 MIN  
1.00+0.20/-0.10  
7
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
10  
V
M
1.5  
V
Collector Current  
65  
mA  
mW  
1. EMITTER  
2. BASE  
PC  
Collector Power Dissipation  
Junction Temperature  
150  
3. COLLECTOR  
Tj  
150  
Tstg  
SOT-23  
Storage Temperature Range  
-55 150  
Marking  
h
Rank  
FE  
Lot No.  
Type Name  
R
ELECTRICAL CHARACTERISTICS (Ta=25  
)
CHARACTERISTIC  
Collector Cut-off Current  
SYMBOL  
ICBO  
TEST CONDITION  
MIN.  
TYP.  
MAX.  
UNIT  
A
VCB=10V, IE=0  
VEB=1V, IC=0  
-
-
-
-
1
1
IEBO  
Emitter Cut-off Current  
DC Current Gain  
A
hFE (Note1)  
Cre  
VCE=8V, IC=20mA  
50  
-
-
250  
0.9  
-
VCB=10V, IE=0, f=1MHz (Note2)  
VCE=8V, IC=20mA  
Reverse Transfer Capacitance  
Transition Frequency  
Insertion Gain  
0.35  
9
pF  
GHz  
dB  
fT  
-
2
|S21e  
NF  
|
VCE=8V, IC=20mA, f=1GHz  
VCE=8V, IC=7mA, f=1GHz  
11  
-
13  
1.2  
-
Noise Figure  
2.5  
dB  
Note 1 : hFE Classification  
L:50~100, M:80~160, N:125~250.  
Note 2 : Cre is measured by 3 terminal method with capacitance bridge.  
2007. 8. 22  
Revision No : 0  
1/5  

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