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KTC3770UL PDF预览

KTC3770UL

更新时间: 2024-02-15 21:26:26
品牌 Logo 应用领域
KEC 晶体放大器晶体管局域网
页数 文件大小 规格书
5页 505K
描述
EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION

KTC3770UL 技术参数

生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-F3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.62其他特性:LOW NOISE
最大集电极电流 (IC):0.1 A基于收集器的最大容量:1 pF
集电极-发射极最大电压:12 V配置:SINGLE
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:R-PDSO-F3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
表面贴装:YES端子形式:FLAT
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):7000 MHz
Base Number Matches:1

KTC3770UL 数据手册

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SEMICONDUCTOR  
KTC3770UL  
EPITAXIAL PLANAR NPN TRANSISTOR  
TECHNICAL DATA  
VHF/UHF WIDE BAND AMPLIFIER APPLICATION.  
FEATURES  
C
1
4
Low Noise Figure, High Gain.  
NF=1.1dB, |S21e|2=11dB (f=1GHz).  
A
DIM MILLIMETERS  
_
A
B
C
D
E
1.0+0.05  
_
+
0.6 0.05  
2
0.36-+0.02  
3
3
0.03  
B
_
+
_
0.25 0.03  
0.15 +0.03  
MAXIMUM RATING (Ta=25  
CHARACTERISTIC  
)
_
F
0.65+0.03  
H
_
2
1
G
H
0.35 +0.03  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
RATING  
UNIT  
V
0.05  
D
D
F
Collector-Base Voltage  
20  
12  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
4
H
G
3
V
E
E
1. Collector  
2. Base  
3. Emitter  
4. Collector  
Collector Current  
100  
mA  
mW  
PC*  
Collector Power Dissipation  
Junction Temperature  
100  
Tj  
150  
ULP-4  
Tstg  
Storage Temperature Range  
Note : * Mounted on a FR4 board (10  
-55 150  
2
10  
1.0 , Cu Pad :100  
)
Marking  
Type Name  
hFE Rank  
ELECTRICAL CHARACTERISTICS (Ta=25  
)
CHARACTERISTIC  
Collector Cut-off Current  
SYMBOL  
ICBO  
TEST CONDITION  
VCB=10V, IE=0  
MIN.  
TYP.  
MAX.  
UNIT  
A
-
-
-
-
1
1
IEBO  
VEB=1V, IC=0  
Emitter Cut-off Current  
DC Current Gain  
A
hFE (Note1)  
Cob  
VCE=10V, IC=20mA  
50  
-
-
250  
1.0  
1.15  
-
Collector Output Capacitance  
Reverse Transfer Capacitance  
Transition Frequency  
Insertion Gain  
-
pF  
pF  
VCB=10V, IE=0, f=1MHz (Note2)  
Cre  
-
5
0.65  
7
fT  
VCE=10V, IC=20mA  
GHz  
dB  
2
|S21e  
NF  
|
VCE=10V, IC=20mA, f=1GHz  
VCE=10V, IC=7mA, f=1GHz  
7.5  
-
11.5  
1.1  
-
Noise Figure  
2
dB  
Note 1 : hFE Classification  
A:50~100, B:80~160, C:125~250.  
Note 2 : Cre is measured by 3 terminal method with capacitance bridge.  
2007. 5. 23  
Revision No : 1  
1/5  

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