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KM23V4100DG-10 PDF预览

KM23V4100DG-10

更新时间: 2023-06-15 00:00:00
品牌 Logo 应用领域
三星 - SAMSUNG 有原始数据的样本ROM光电二极管
页数 文件大小 规格书
5页 101K
描述
MASK ROM, 256KX16, 100ns, CMOS, PDSO40, 0.525 INCH, SOP-40

KM23V4100DG-10 数据手册

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KM23V4100D(G)  
CMOS MASK ROM  
4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM  
GENERAL DESCRIPTION  
FEATURES  
· Switchable orginization  
524,288 x 8(byte mode)  
262,144 x 16(word mode)  
· Fast access time  
3.3V Operation : 100ns(Max.)  
3.0V Operation : 120ns(Max.)  
· Supply voltage : single +3.0V/ single +3.3V  
· Current consumption  
The KM23V4100D(G) is a fully static mask programmable ROM  
fabricated using silicon gate CMOS process technology, and is  
organized either as 524,288 x 8bit(byte mode) or as 262,144 x  
16bit(word mode) depending on BHE voltage level.(See mode  
selection table)  
This device operates with 3.0V or 3.3V power supply, and all  
inputs and outputs are TTL compatible.  
Because of its asynchronous operation, it requires no external  
clock assuring extremely easy operation.  
Operating : 25mA(Max.)  
Standby : 30mA(Max.)  
It is suitable for use in program memory of microprocessor, and  
data memory, character generator.  
· Fully static operation  
· All inputs and outputs TTL compatible  
· Three state outputs  
· Package  
-. KM23V4100D : 40-DIP-600  
-. KM23V4100DG : 40-SOP-525  
The KM23V4100D is packaged in  
KM23V4100DG is a 40-SOP.  
a
40-DIP and the  
FUNCTIONAL BLOCK DIAGRAM  
PIN CONFIGURATION  
A17  
X
MEMORY CELL  
MATRIX  
BUFFERS  
AND  
.
.
.
.
.
.
.
.
(262,144x16/  
524,288x8)  
A8  
A9  
A17  
1
40  
39  
38  
DECODER  
A7  
2
A6  
3
A10  
A5  
A4  
4
5
A11  
A12  
A13  
37  
36  
35  
34  
Y
SENSE AMP.  
BUFFERS  
AND  
A3  
6
DATA OUT  
BUFFERS  
A2  
7
A14  
DECODER  
A0  
A1  
8
33 A15  
A0  
A16  
32  
9
A-1  
CE  
VSS  
BHE  
VSS  
10  
11  
31  
30  
29  
28  
27  
26  
DIP  
&
SOP  
. . .  
Q15/A-1  
Q7  
OE 12  
CE  
Q0  
Q8  
13  
14  
15  
16  
17  
18  
Q0/Q8  
Q7/Q15  
CONTROL  
LOGIC  
Q14  
OE  
Q1  
Q6  
BHE  
Q9  
25 Q13  
24 Q5  
Q2  
Q10  
Q12  
Q4  
23  
22  
21  
Pin Name  
A0 - A17  
Pin Function  
Q3 19  
Q11  
Address Inputs  
Data Outputs  
20  
VCC  
Q0 - Q14  
Output 15(Word mode)/  
LSB Address(Byte mode)  
Q15 /A-1  
KM23V4100D(G)  
BHE  
CE  
Word/Byte selection  
Chip Enable  
Output Enable  
Power  
OE  
VCC  
VSS  
Ground  

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