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KM23V64005BF PDF预览

KM23V64005BF

更新时间: 2024-11-26 07:10:47
品牌 Logo 应用领域
三星 - SAMSUNG 有原始数据的样本ROM
页数 文件大小 规格书
6页 113K
描述
MASK ROM, 4MX16, 120ns, CMOS, PBGA48

KM23V64005BF 数据手册

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Preliminary Information  
CMOS MASK ROM  
KM23V64005BF  
64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM  
FEATURES  
GENERAL DESCRIPTION  
The KM23V64005BF is a fully static mask programmable ROM  
fabricated using silicon gate CMOS process technology, and is  
organized either as 8,388,608 x 8 bit(byte mode) or as 4,194,304  
x 16 bit(word mode) depending on BHE voltage level. This  
device includes page read mode function, page read mode  
allows 8 words (or 16 bytes) of data to be read fast in the same  
page, CE and A3 ~ A21 should not be changed.  
· Switchable organization  
8,388,608 x 8(byte mode)  
4,194,304 x 16(word mode)  
· Fast access Time  
Random Access Time/Page Access Time  
3.3V Operation : 100/30ns(max.)  
3.0V Operation : 120/40ns(max.)  
· 8 words / 16bytes page access  
· Supply voltage  
VCC : single +3.3V/ single +3.0V  
VCCQ : equal to VCC  
· Temperature : 0°C ~ +70°C  
· Current consumption  
Operating(ICC) : 60mA (max)  
Standby(ISB2) : 50uA (max)  
· Fully static operation  
· All inputs and outputs TTL compatible  
· Package  
This device operates with 3.0V or 3.3V power supply, and all  
inputs and outputs are TTL compatible.  
Because of its asynchronous operation, it requires no external  
clock assuring extremely easy operation.  
It is suitable for use in program memory of microprocessor, and  
operating system and/or application software storage for hand-  
held application.  
The KM23V64005BF is packaged in a 48-CSP with 0.75mm ball  
pitch and 6x8 ball array.  
KM23V64005BF : 48-CSP with 0.75mm ball pitch  
FUNCTIONAL BLOCK DIAGRAM  
Pin Name  
A0 - A2  
Pin Function  
Page Address Inputs  
A21  
X
MEMORY CELL  
MATRIX  
A3 - A21  
Q0 - Q14  
Address Inputs  
Data Outputs  
BUFFERS  
AND  
.
.
.
.
.
.
.
.
(4,194,304x16/  
8,388,608x8)  
Output 15(Word mode)/  
LSB Address(Byte mode)  
DECODER  
Q15 /A-1  
BHE  
CE  
Word/Byte selection  
Chip Enable  
Y
SENSE AMP.  
OE  
Output Enable  
Power  
BUFFERS  
AND  
VCC  
VCCQ  
VSS  
NC  
DATA OUT  
BUFFERS  
Data Output Power ( =VCC)  
Ground  
DECODER  
A3  
A0~A2  
A-1  
No Connection  
. . .  
CE  
Q0/Q8  
Q7/Q15  
CONTROL  
LOGIC  
OE  
BHE  

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