是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 包装说明: | SOP, SOP32,.56 |
Reach Compliance Code: | unknown | 风险等级: | 5.92 |
最长访问时间: | 200 ns | JESD-30 代码: | R-PDSO-G32 |
JESD-609代码: | e0 | 内存密度: | 8388608 bit |
内存集成电路类型: | MASK ROM | 内存宽度: | 8 |
湿度敏感等级: | 3 | 端子数量: | 32 |
字数: | 1048576 words | 字数代码: | 1000000 |
最高工作温度: | 70 °C | 最低工作温度: | |
组织: | 1MX8 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | SOP | 封装等效代码: | SOP32,.56 |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 电源: | 3.3 V |
认证状态: | Not Qualified | 最大待机电流: | 0.00005 A |
子类别: | MASK ROMs | 最大压摆率: | 0.03 mA |
标称供电电压 (Vsup): | 3.3 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | COMMERCIAL |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | GULL WING |
端子节距: | 1.27 mm | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 40 | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
KM23V8000CG-25 | SAMSUNG |
获取价格 |
MASK ROM, 1MX8, 250ns, CMOS, PDSO32 | |
KM23V8000D-10 | SAMSUNG |
获取价格 |
MASK ROM, 1MX8, 100ns, CMOS, PDIP32, 0.600 INCH, DIP-32 | |
KM23V8000D-12 | SAMSUNG |
获取价格 |
MASK ROM, 1MX8, 120ns, CMOS, PDIP32, 0.600 INCH, DIP-32 | |
KM23V8000DG-10 | SAMSUNG |
获取价格 |
MASK ROM, 1MX8, 100ns, CMOS, PDSO32, 0.525 INCH, SOP-32 | |
KM23V8001B-30 | SAMSUNG |
获取价格 |
MASK ROM, 1MX8, 300ns, CMOS, PDIP32, 0.600 INCH, PLASTIC, DIP-32 | |
KM23V8100B-25 | SAMSUNG |
获取价格 |
MASK ROM, 1MX8, 250ns, CMOS, PDIP42, 0.600 INCH, PLASTIC, DIP-42 | |
KM23V8100B-30 | SAMSUNG |
获取价格 |
MASK ROM, 1MX8, 300ns, CMOS, PDIP42, 0.600 INCH, PLASTIC, DIP-42 | |
KM23V8100BG-25 | SAMSUNG |
获取价格 |
MASK ROM, 1MX8, 250ns, CMOS, PDSO44, 0.600 INCH, PLASTIC, SOP-44 | |
KM23V8100BG-30 | SAMSUNG |
获取价格 |
MASK ROM, 1MX8, 300ns, CMOS, PDSO44, 0.600 INCH, PLASTIC, SOP-44 | |
KM23V8100C-20 | SAMSUNG |
获取价格 |
MASK ROM, 512KX16, 200ns, CMOS, PDIP42 |