生命周期: | Obsolete | 零件包装代码: | DIP |
包装说明: | DIP, | 针数: | 32 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8542.32.00.71 | 风险等级: | 5.84 |
最长访问时间: | 100 ns | JESD-30 代码: | R-PDIP-T32 |
长度: | 41.91 mm | 内存密度: | 8388608 bit |
内存集成电路类型: | MASK ROM | 内存宽度: | 8 |
功能数量: | 1 | 端子数量: | 32 |
字数: | 1048576 words | 字数代码: | 1000000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 70 °C |
最低工作温度: | 组织: | 1MX8 | |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | DIP |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
并行/串行: | PARALLEL | 认证状态: | Not Qualified |
座面最大高度: | 5.08 mm | 最大供电电压 (Vsup): | 3.6 V |
最小供电电压 (Vsup): | 3 V | 标称供电电压 (Vsup): | 3.3 V |
表面贴装: | NO | 技术: | CMOS |
温度等级: | COMMERCIAL | 端子形式: | THROUGH-HOLE |
端子节距: | 2.54 mm | 端子位置: | DUAL |
宽度: | 15.24 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
KM23V8000D-12 | SAMSUNG |
获取价格 |
MASK ROM, 1MX8, 120ns, CMOS, PDIP32, 0.600 INCH, DIP-32 | |
KM23V8000DG-10 | SAMSUNG |
获取价格 |
MASK ROM, 1MX8, 100ns, CMOS, PDSO32, 0.525 INCH, SOP-32 | |
KM23V8001B-30 | SAMSUNG |
获取价格 |
MASK ROM, 1MX8, 300ns, CMOS, PDIP32, 0.600 INCH, PLASTIC, DIP-32 | |
KM23V8100B-25 | SAMSUNG |
获取价格 |
MASK ROM, 1MX8, 250ns, CMOS, PDIP42, 0.600 INCH, PLASTIC, DIP-42 | |
KM23V8100B-30 | SAMSUNG |
获取价格 |
MASK ROM, 1MX8, 300ns, CMOS, PDIP42, 0.600 INCH, PLASTIC, DIP-42 | |
KM23V8100BG-25 | SAMSUNG |
获取价格 |
MASK ROM, 1MX8, 250ns, CMOS, PDSO44, 0.600 INCH, PLASTIC, SOP-44 | |
KM23V8100BG-30 | SAMSUNG |
获取价格 |
MASK ROM, 1MX8, 300ns, CMOS, PDSO44, 0.600 INCH, PLASTIC, SOP-44 | |
KM23V8100C-20 | SAMSUNG |
获取价格 |
MASK ROM, 512KX16, 200ns, CMOS, PDIP42 | |
KM23V8100C-25 | SAMSUNG |
获取价格 |
MASK ROM, 512KX16, 250ns, CMOS, PDIP42 | |
KM23V8100CG-15 | SAMSUNG |
获取价格 |
MASK ROM, 512KX16, 150ns, CMOS, PDSO44 |