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KM23V8000D-10 PDF预览

KM23V8000D-10

更新时间: 2024-11-25 15:36:23
品牌 Logo 应用领域
三星 - SAMSUNG 有原始数据的样本ROM光电二极管内存集成电路
页数 文件大小 规格书
4页 89K
描述
MASK ROM, 1MX8, 100ns, CMOS, PDIP32, 0.600 INCH, DIP-32

KM23V8000D-10 技术参数

生命周期:Obsolete零件包装代码:DIP
包装说明:DIP,针数:32
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.71风险等级:5.84
最长访问时间:100 nsJESD-30 代码:R-PDIP-T32
长度:41.91 mm内存密度:8388608 bit
内存集成电路类型:MASK ROM内存宽度:8
功能数量:1端子数量:32
字数:1048576 words字数代码:1000000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:1MX8
封装主体材料:PLASTIC/EPOXY封装代码:DIP
封装形状:RECTANGULAR封装形式:IN-LINE
并行/串行:PARALLEL认证状态:Not Qualified
座面最大高度:5.08 mm最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:NO技术:CMOS
温度等级:COMMERCIAL端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
宽度:15.24 mmBase Number Matches:1

KM23V8000D-10 数据手册

 浏览型号KM23V8000D-10的Datasheet PDF文件第2页浏览型号KM23V8000D-10的Datasheet PDF文件第3页浏览型号KM23V8000D-10的Datasheet PDF文件第4页 
KM23V8000D(G)  
CMOS MASK ROM  
8M-Bit (1Mx8) CMOS MASK ROM  
FEATURES  
GENERAL DESCRIPTION  
· 1,048,576 x 8 bit organization  
· Fast access time  
3.3V Operation : 100ns(Max.)  
3.0V Operation : 120ns(Max.)  
· Supply voltage :single +3.0V/ single +3.3V  
· Current consumption  
Operating : 30mA(Max.)  
Standby : 30mA(Max.)  
· Fully static operation  
· All inputs and outputs TTL compatible  
· Three state outputs  
The KM23V8000D(G) is a fully static mask programmable ROM  
organized 1,048,576 x 8 bit. It is fabricated using silicon gate  
CMOS process technology.  
This device operates with 3.0V or 3.3V power supply, and all  
inputs and outputs are TTL compatible.  
Because of its asynchronous operation, it requires no external  
clock assuring extremely easy operation.  
It is suitable for use in program memory of microprocessor, and  
data memory, character generator.  
The KM23V8000D is packaged in  
KM23V8000DG in a 32-SOP.  
a 32-DIP and the  
· Package  
-. KM23V8000D : 32-DIP-600  
-. KM23V8000DG : 32-SOP-525  
FUNCTIONAL BLOCK DIAGRAM  
PIN CONFIGURATION  
A19  
X
MEMORY CELL  
MATRIX  
BUFFERS  
AND  
.
.
.
.
.
.
.
.
1
2
A19  
A16  
A15  
A12  
A7  
VCC  
32  
(1,048,576x8)  
DECODER  
31 A18  
A17  
A14  
A13  
A8  
3
30  
29  
28  
27  
26  
25  
24  
4
Y
SENSE AMP.  
BUFFERS  
5
BUFFERS  
AND  
A6  
6
A5  
DECODER  
A9  
A0  
7
DIP  
&
A4  
8
A11  
SOP  
A3  
9
OE  
.
. .  
A2  
10  
23 A10  
A1  
21  
21  
20  
11  
12  
13  
14  
CE  
Q7  
Q6  
CE  
OE  
Q0  
Q7  
CONTROL  
LOGIC  
A0  
Q0  
Q1  
Q2  
VSS  
19 Q5  
Q4  
Q3  
15  
16  
18  
17  
Pin Name  
A0 - A19  
Q0 - Q7  
CE  
Pin Function  
Address Inputs  
Data Outputs  
Chip Enable  
Output Enable  
Power  
KM23V8000D(G)  
OE  
VCC  
VSS  
Ground  

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