Datasheet > KM23V8000DG-10

KM23V8000DG-10

更新时间： 2024-11-26 04:20:03

品牌	Logo	应用领域
三星 - SAMSUNG		有原始数据的样本ROM 光电二极管
页数	文件大小	规格书
4页	89K
描述
MASK ROM, 1MX8, 100ns, CMOS, PDSO32, 0.525 INCH, SOP-32

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KM23V8000DG-10 数据手册

KM23V8000D(G)

CMOS MASK ROM

8M-Bit (1Mx8) CMOS MASK ROM

FEATURES

GENERAL DESCRIPTION

· 1,048,576 x 8 bit organization

· Fast access time

3.3V Operation : 100ns(Max.)

3.0V Operation : 120ns(Max.)

· Supply voltage :single +3.0V/ single +3.3V

· Current consumption

Operating : 30mA(Max.)

Standby : 30mA(Max.)

· Fully static operation

· All inputs and outputs TTL compatible

· Three state outputs

The KM23V8000D(G) is a fully static mask programmable ROM

organized 1,048,576 x 8 bit. It is fabricated using silicon gate

CMOS process technology.

This device operates with 3.0V or 3.3V power supply, and all

inputs and outputs are TTL compatible.

Because of its asynchronous operation, it requires no external

clock assuring extremely easy operation.

It is suitable for use in program memory of microprocessor, and

data memory, character generator.

The KM23V8000D is packaged in

KM23V8000DG in a 32-SOP.

a 32-DIP and the

· Package

-. KM23V8000D : 32-DIP-600

-. KM23V8000DG : 32-SOP-525

FUNCTIONAL BLOCK DIAGRAM

PIN CONFIGURATION

A19

MEMORY CELL

MATRIX

BUFFERS

AND

A19

A16

A15

A12

VCC

(1,048,576x8)

DECODER

31 A18

A17

A14

A13

SENSE AMP.

BUFFERS

AND

DECODER

DIP

A11

SOP

. .

23 A10

CONTROL

LOGIC

VSS

19 Q5

Pin Name

A0 - A19

Q0 - Q7

Pin Function

Address Inputs

Data Outputs

Chip Enable

Output Enable

Power

KM23V8000D(G)

VCC

VSS

Ground

12 3 4

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