是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | DIP | 包装说明: | DIP, DIP40,.6 |
针数: | 40 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8542.32.00.71 |
风险等级: | 5.92 | 最长访问时间: | 100 ns |
其他特性: | TTL COMPATIBLE I/O | JESD-30 代码: | R-PDIP-T40 |
JESD-609代码: | e0 | 长度: | 52.42 mm |
内存密度: | 4194304 bit | 内存集成电路类型: | MASK ROM |
内存宽度: | 16 | 功能数量: | 1 |
端子数量: | 40 | 字数: | 262144 words |
字数代码: | 256000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 70 °C | 最低工作温度: | |
组织: | 256KX16 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | DIP | 封装等效代码: | DIP40,.6 |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
并行/串行: | PARALLEL | 峰值回流温度(摄氏度): | NOT SPECIFIED |
电源: | 3.3 V | 认证状态: | Not Qualified |
座面最大高度: | 5.08 mm | 最大待机电流: | 0.00003 A |
子类别: | MASK ROMs | 最大压摆率: | 0.025 mA |
最大供电电压 (Vsup): | 3.6 V | 最小供电电压 (Vsup): | 3 V |
标称供电电压 (Vsup): | 3.3 V | 表面贴装: | NO |
技术: | CMOS | 温度等级: | COMMERCIAL |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | THROUGH-HOLE |
端子节距: | 2.54 mm | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 宽度: | 15.24 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
KM23V4200D-12 | SAMSUNG |
获取价格 |
MASK ROM, 256KX16, 120ns, CMOS, PDIP40, 0.600 INCH, DIP-40 | |
KM23V4200D-15 | SAMSUNG |
获取价格 |
MASK ROM, 256KX16, 150ns, CMOS, PDIP40, 0.600 INCH, DIP-40 | |
KM23V64000AG-10 | SAMSUNG |
获取价格 |
MASK ROM, 4MX16, 100ns, CMOS, PDSO44, 0.600 INCH, SOP-44 | |
KM23V64000ATY | SAMSUNG |
获取价格 |
MASK ROM, 8MX8, 120ns, CMOS, PDSO48, 12 X 18 MM, TSOP1-48 | |
KM23V64000ATY-10 | SAMSUNG |
获取价格 |
MASK ROM, 4MX16, 100ns, CMOS, PDSO48, 12 X 18 MM, TSOP1-48 | |
KM23V64000ATY-12 | SAMSUNG |
获取价格 |
MASK ROM, 4MX16, 120ns, CMOS, PDSO48, 12 X 18 MM, TSOP1-48 | |
KM23V64000B-10 | SAMSUNG |
获取价格 |
MASK ROM, 4MX16, 100ns, CMOS, PDIP42, 0.600 INCH, DIP-42 | |
KM23V64000B-12 | SAMSUNG |
获取价格 |
MASK ROM, 4MX16, 120ns, CMOS, PDIP42, 0.600 INCH, DIP-42 | |
KM23V64000BG-12 | SAMSUNG |
获取价格 |
MASK ROM, 4MX16, 120ns, CMOS, PDSO44, 0.600 INCH, SOP-44 | |
KM23V64000BT | SAMSUNG |
获取价格 |
MASK ROM, 4MX16, 120ns, CMOS, PDSO44 |