是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 零件包装代码: | QFP |
包装说明: | WQFP, QFP44,.7SQ,32 | 针数: | 44 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8542.32.00.71 | 风险等级: | 5.92 |
最长访问时间: | 250 ns | 备用内存宽度: | 16 |
JESD-30 代码: | S-PQFP-G44 | JESD-609代码: | e0 |
长度: | 14 mm | 内存密度: | 4194304 bit |
内存集成电路类型: | MASK ROM | 内存宽度: | 8 |
功能数量: | 1 | 端子数量: | 44 |
字数: | 524288 words | 字数代码: | 512000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 70 °C |
最低工作温度: | 组织: | 512KX8 | |
输出特性: | 3-STATE | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | WQFP | 封装等效代码: | QFP44,.7SQ,32 |
封装形状: | SQUARE | 封装形式: | FLATPACK, WINDOW |
并行/串行: | PARALLEL | 峰值回流温度(摄氏度): | NOT SPECIFIED |
电源: | 3/3.3 V | 认证状态: | Not Qualified |
座面最大高度: | 2.8 mm | 最大待机电流: | 0.00005 A |
子类别: | MASK ROMs | 最大压摆率: | 0.03 mA |
最大供电电压 (Vsup): | 3.6 V | 最小供电电压 (Vsup): | 2.7 V |
标称供电电压 (Vsup): | 3.3 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | COMMERCIAL |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | GULL WING |
端子节距: | 0.8 mm | 端子位置: | QUAD |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 宽度: | 14 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
KM23V4100BFP-30 | SAMSUNG |
获取价格 |
MASK ROM, 512KX8, 300ns, CMOS, PQFP44, QFP-44 | |
KM23V4100D-10 | SAMSUNG |
获取价格 |
MASK ROM, 256KX16, 100ns, CMOS, PDIP40, 0.600 INCH, DIP-40 | |
KM23V4100D-12 | SAMSUNG |
获取价格 |
MASK ROM, 256KX16, 120ns, CMOS, PDIP40, 0.600 INCH, DIP-40 | |
KM23V4100DG | SAMSUNG |
获取价格 |
MASK ROM, 512KX8, 120ns, CMOS, PDSO40, 0.525 INCH, SOP-40 | |
KM23V4100DG-10 | SAMSUNG |
获取价格 |
MASK ROM, 256KX16, 100ns, CMOS, PDSO40, 0.525 INCH, SOP-40 | |
KM23V4200D | SAMSUNG |
获取价格 |
MASK ROM, 256KX16, 120ns, CMOS, PDIP40 | |
KM23V4200D-10 | SAMSUNG |
获取价格 |
MASK ROM, 256KX16, 100ns, CMOS, PDIP40, 0.600 INCH, DIP-40 | |
KM23V4200D-12 | SAMSUNG |
获取价格 |
MASK ROM, 256KX16, 120ns, CMOS, PDIP40, 0.600 INCH, DIP-40 | |
KM23V4200D-15 | SAMSUNG |
获取价格 |
MASK ROM, 256KX16, 150ns, CMOS, PDIP40, 0.600 INCH, DIP-40 | |
KM23V64000AG-10 | SAMSUNG |
获取价格 |
MASK ROM, 4MX16, 100ns, CMOS, PDSO44, 0.600 INCH, SOP-44 |