Datasheet > KDT3002A

KDT3002A

更新时间： 2024-09-15 11:29:27

品牌	Logo	应用领域
可天士 - KODENSHI		晶体光电晶体管光电晶体管
页数	文件大小	规格书
2页	218K
描述
Silicon photo transistor

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KDT3002A 数据手册

Silicon photo transistor

KDT3002A

The KDT3002A is high sensitivity NPN silicon photo

[Unit : mm]

Dimensions

transistor mounted in Φ3mm(T-1) all plastic mold type.

This photo transistor is both compact and

easy to mount.

Features

Higly sensitive photo transistor

Visable ray cut off mold type

Applications

VCR, Camcoders

Floppy disk drivers

Optical detectors/switch

[T_A= 25

Unit

]

Absolute Maximum Ratings

Parameter

Collector-Emitter Voltage

Emitter-Collector Voltage

Collector Current

Symbol

V_CEO

V_ECO

I_C

Rating

P_C

Collector Power Dissipation

Operating Temperature

Storage Temperature

Soldering Temperature*¹

Topr.

Tstg.

Tsol

-20~+85

-30~+85

240

Notes : 1. For MAX. 5 seconds at the position of 3 mm from the package.

ELECTRO- OPTICAL CHARACTERISTICS

Description

Symbol

I_CEO

Condition

Min.

Typ.

Max.

Unit

V_CE=10V, E_E=0

Dark Current

Light Current

200

V_CE=10V, EV=500lx ※1

ICEL

2.5

5.0

Spectral Sensitivity

Peek wavelength

Viewing Angle

700~1050

V_R=0V

880

±30

∆θ

deg.

Response Time(Rise Time)

Response Time(Fall Time)

2.5

4.7

V_CC=10V, Ic=1㎃

RL=100Ω

㎲

※1 Color temp. =2856K Standard Tungsten lamp

- 1 -

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