Datasheet > KDT5001A_0604

KDT5001A_0604

更新时间： 2024-11-18 11:29:27

品牌	Logo	应用领域
可天士 - KODENSHI		晶体光电晶体管光电晶体管
页数	文件大小	规格书
2页	239K
描述
Silicon photo transistor

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KDT5001A_0604 数据手册

Silicon photo transistor

KDT5001A

The KDT5001A is high sensitivity silicon photo

transistor which converts light to electrical signal.

This photo transistor is both COB package and

easy to mount.

[Unit : mm]

Dimensions

Features

Higly sensitive photo transistor

Chip On Board package.

High speed response.

Applications

AV Instrumemts

Touch panels for ATM & FA epuiments

Optical counter

Pin Description

① EMITTER

② COLECTOR

[T_A= 25

]

Absolute Maximum Ratings

Parameter

Symbol

V_CEO

V_ECO

I_C

Rating

Unit

Collector-Emitter Voltage

Emitter-Collector Voltage

Collector Current

P_C

Collector Power Dissipation

Operating Temperature

Storage Temperature

Soldering Temperature*¹

*1.Test Condition : t ≤ 3s

Topr.

Tstg.

Tsol

-5~+50

-20~+80

240

ELECTRO- OPTICAL CHARACTERISTICS

Description Symbol

I_CEO

Condition

Min.

Typ.

Max.

Unit

V_CE=10V, E_E=0

Dark Current

Photo Current

100

V_CE=5V, E_E=0.5㎽/㎠,

_PK=640㎚

I_PCE

1.2

2.4

Spectral Sensitivity

Peek wavelength

500~1050

880

V_R=0V

Viewing Angle

deg.

1/2

IC=100

, E_E=0.5mW/cm²,

_PK=640nm

Collector-Emitter Saturation Voltage

V_CE(SAT)

200

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