Datasheet > KDV1471

KDV1471

更新时间： 2024-09-15 22:29:59

品牌	Logo	应用领域
KEC		二极管变容二极管局域网
页数	文件大小	规格书
2页	74K
描述
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE

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中文翻译

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KDV1471 数据手册

KDV1471

SEMICONDUCTOR

VARIABLE CAPACITANCE DIODE

SILICON EPITAXIAL PLANAR DIODE

TECHNICAL DATA

FM RADIO BAND TUNING APPLICATION.

FEATURES

ᴌHigh Capacitance Ratio : C_1V/C_5V=5.0(Min.)

ᴌExcellent C-V Characteristics.

ᴌVariations of Capacitance Values is Little.

ᴌSmall Package.

DIM

MILLIMETERS

2.93 0.20

1.30+0.20/-0.15

1.30 MAX

0.45+0.15/-0.05

2.40+0.30/-0.20

1.90

0.95

0.13+0.10/-0.05

0.00 - 0.10

0.55

0.20 MIN

1.00+0.20/-0.10

MAXIMUM RATING (Ta=25ᴱ)

CHARACTERISTIC

SYMBOL

RATING

UNIT

V_R

T_j

Reverse Voltage

Junction Temperature

150

ᴱ

1. ANODE

2. NC

T_stg

Storage Temperature Range

-55ᴕ150

ᴱ

3. CATHODE

SOT-23

CAPACITANCE(C_IV)

30.16~33.63

GRADE

UNIT

33.30~37.13

Marking

36.77~40.99

Grade

Lot No.

Type Name

ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

V_R

I_R

Reverse Voltage

I_R=10ỌA

V_R=10V

Reverse Current

Capacitance

C_1V

C_4.5V

V_R=1V, f=1MHz

V_R=4.5V, f=1MHz

C_1V/C_5V, f=1MHz

V_R=1.5V, f=100MHz

30.16

6.2

5.0

35.60

7.7

40.99

9.2

Capacitance Ratio

Series Resistance

r_S

0.8

1.0

ή

2001. 5. 28

Revision No : 1

1/2

中文翻译

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